Effects of Tamm state on electron tunneling through Schottky barrier and on bulk electron photoemission in metal-semiconductor nanostructures

Abstract

A model has been developed to calculate the Tamm quasi-level in metal-semiconductor structures with Schottky barrier. The model was used to show that electron resonance tunneling from metal to semiconductor through the Schottky barrier can occur with the Tamm quasi-level at the metal-semiconductor interface. The resonance tunneling with the Tamm quasi-level can strongly affect the electron photoemission in plasmonic structures from the metal to the surrounding semiconductor, lowering the red limit of the photoeffect and significantly increasing the internal quantum efficiency of photoemission and the quantum yield of hot carrier generation in plasmonic structures, especially for photochemistry (photocatalysis).