Yuyang Zeng, Yongle Wu, Yuhao Yang, Leidan Pan, Weimin Wang
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引用次数: 0
Abstract
In this paper, a novel structure for spoof surface plasmon polariton (SSPP) is proposed, enabling chip-scale millimeter-wave SSPP with compact dimensions. This structure allows the equivalent surface plasmon frequency to be flexibly adjusted without increasing lateral dimensions, making it suitable for on-chip millimeter-wave passive device designs and interconnections. Compared to conventional SSPP designs, the proposed structure significantly reduces on-chip area while maintaining excellent electromagnetic performance. Leveraging these characteristics, several on-chip implementations have been developed using integrated passive device (IPD) technology, including SSPP transmission lines, coupled lines, and an SSPP-based millimeter-wave Wilkinson power divider featuring a wideband, flat power division ratio. The dispersion curves and S-parameters of the proposed SSPP designs were simulated and measured, validating their feasibility for on-chip integration.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.