Kiwan Ahn , Md Mobaidul Islam , Yeoungjin Chang , Jin Jang
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引用次数: 0
Abstract
We report the La doping effect in ZrO2 at a substantially lower process temperature of 450 °C. The optimum La doping in ZrO2 increases the orthorhombic phase fraction due to the reduction of bulk free and surface energy between orthorhombic phase and monoclinic phase. The 30 nm ZrO2 demonstrates enhanced remnant polarization of 18.4 μC cm−2 after 8 % La doping. The inverted staggered InGaZnO thin-film transistors are fabricated with 8 % La:ZrO2 gate oxide, demonstrating memory window tuning from 1.1 to 3.5 V and low subthreshold swing of 43 mV dec−1 during reverse sweep.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
• Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
• Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart
• Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction
• Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots.
• Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing.
• Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive