Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-05-29 DOI:10.1063/5.0271165

Rinat Yapparov, Alejandro Quevedo, Tanay Tak, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius

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引用次数: 0

Abstract

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

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InGaN量子阱led中螺纹位错对v缺陷辅助横向载流子注入和复合的影响

发光二极管（LED）的InGaN量子阱（qw）之间的非均匀空穴分布对LED的效率有负面影响。通过螺纹位错处形成的v型缺陷的侧壁注入侧孔可以提高均匀性。然而，v型缺陷和位错之间的固有耦合可能会影响空穴注入和非辐射复合的效率。在这项工作中，我们通过扫描近场电致发光和光致发光光谱，在含有大（~ 0.5 μm） v缺陷的单个绿色发光InGaN QW led上测试了位错对注入和重组的可能影响。测量结果没有提供任何证据表明在v型缺陷面或其顶点的位错处有较低的注入效率或增强的非辐射复合。这表明大v缺陷是长波InGaN led的优良体积注入剂。进一步证明了即使在单量子阱器件中，v型缺陷也是优先的空穴注入剂。与垂直注入相比，v型缺陷注入可以降低工作电压，这将有助于提高壁塞效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.