Jaeyoung Seo, Seongchan Kim, Dongjoon Yeo, Namyoung Gwak, Nuri Oh
{"title":"Pnictide-based colloidal quantum dots for infrared sensing applications.","authors":"Jaeyoung Seo, Seongchan Kim, Dongjoon Yeo, Namyoung Gwak, Nuri Oh","doi":"10.1186/s40580-025-00489-y","DOIUrl":null,"url":null,"abstract":"<p><p>Pnictide-based quantum dots (QDs) have emerged as promising materials for next-generation infrared photodetectors due to their superior physical and electrical properties. Among them, InAs and InSb QDs are particularly attractive for their tunable bandgaps in the short-wave infrared (SWIR) region, high carrier mobility, and compatibility with solution-based, large-area, and low-cost fabrication processes. This review discusses recent advancements in the synthesis of InAs and InSb QDs, focusing on precursor strategies and surface engineering techniques to enhance their optical and electronic properties. Additionally, we explore their integration into infrared photodetectors, analyzing current performance and limitations. Finally, we outline future research directions aimed at further enhancing material properties and device performance, paving the way for the broader adoption of III-V QDs in next-generation infrared technologies.</p>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":"26"},"PeriodicalIF":13.4000,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12122974/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Convergence","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1186/s40580-025-00489-y","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Pnictide-based quantum dots (QDs) have emerged as promising materials for next-generation infrared photodetectors due to their superior physical and electrical properties. Among them, InAs and InSb QDs are particularly attractive for their tunable bandgaps in the short-wave infrared (SWIR) region, high carrier mobility, and compatibility with solution-based, large-area, and low-cost fabrication processes. This review discusses recent advancements in the synthesis of InAs and InSb QDs, focusing on precursor strategies and surface engineering techniques to enhance their optical and electronic properties. Additionally, we explore their integration into infrared photodetectors, analyzing current performance and limitations. Finally, we outline future research directions aimed at further enhancing material properties and device performance, paving the way for the broader adoption of III-V QDs in next-generation infrared technologies.
期刊介绍：
Nano Convergence is an internationally recognized, peer-reviewed, and interdisciplinary journal designed to foster effective communication among scientists spanning diverse research areas closely aligned with nanoscience and nanotechnology. Dedicated to encouraging the convergence of technologies across the nano- to microscopic scale, the journal aims to unveil novel scientific domains and cultivate fresh research prospects.
Operating on a single-blind peer-review system, Nano Convergence ensures transparency in the review process, with reviewers cognizant of authors' names and affiliations while maintaining anonymity in the feedback provided to authors.
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