{"title":"Low-Power Subthreshold Voltage References for High-Temperature Applications","authors":"Youngwoo Ji;Yuyang Li;Inhee Lee","doi":"10.1109/TCSI.2025.3554367","DOIUrl":null,"url":null,"abstract":"Advanced Internet-of-Things (IoT) devices are increasingly used in high-temperature environments, such as automotive, aerospace, defense, and industrial applications. High-temperature voltage references are crucial for these systems. This paper presents two topologies designed for high-temperature operation. The first topology minimizes design costs by using a replica branch to decouple leakage from the core, reducing its impact on the reference voltage. The second topology optimizes the operating temperature by employing one-stage amplifiers as buffers to handle junction leakage while maintaining body voltage. Both designs are fabricated in a 180 nm CMOS process. The first design supports operation up to <inline-formula> <tex-math>$140~^{\\circ }$ </tex-math></inline-formula> C with an average temperature coefficient (TC) of 70 ppm/°C, while the second design operates up to <inline-formula> <tex-math>$170~^{\\circ }$ </tex-math></inline-formula> C with a TC of 64 ppm/°C. The designs also exhibit line sensitivities of 0.46 %/V and 0.31 %/V, PSRRs of –37.8 dB and –38.3 dB at 100 Hz, and power consumption of 111 pW and 136.8 pW at room temperature, respectively.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 6","pages":"2529-2542"},"PeriodicalIF":5.2000,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems I: Regular Papers","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10962193/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Advanced Internet-of-Things (IoT) devices are increasingly used in high-temperature environments, such as automotive, aerospace, defense, and industrial applications. High-temperature voltage references are crucial for these systems. This paper presents two topologies designed for high-temperature operation. The first topology minimizes design costs by using a replica branch to decouple leakage from the core, reducing its impact on the reference voltage. The second topology optimizes the operating temperature by employing one-stage amplifiers as buffers to handle junction leakage while maintaining body voltage. Both designs are fabricated in a 180 nm CMOS process. The first design supports operation up to $140~^{\circ }$ C with an average temperature coefficient (TC) of 70 ppm/°C, while the second design operates up to $170~^{\circ }$ C with a TC of 64 ppm/°C. The designs also exhibit line sensitivities of 0.46 %/V and 0.31 %/V, PSRRs of –37.8 dB and –38.3 dB at 100 Hz, and power consumption of 111 pW and 136.8 pW at room temperature, respectively.
期刊介绍:
TCAS I publishes regular papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: - Circuits: Analog, Digital and Mixed Signal Circuits and Systems - Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic - Circuits and Systems, Power Electronics and Systems - Software for Analog-and-Logic Circuits and Systems - Control aspects of Circuits and Systems.