Design and Analysis of Passive-Integrated Absorptive Flat-Group-Delay RF Bandpass Filters in GaAs Technology for Digital Communications

IF 5.2 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Nasrin Iranpour;Li Yang;Roberto Gómez-García;Xi Zhu
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引用次数: 0

Abstract

A family of on-chip passive-integrated absorptive flat-group-delay RF bandpass filters (BPFs) in gallium arsenide (GaAs) technology is presented. These wideband BPFs feature broadband quasi-reflectionless behavior along with quasi-constant group-delay responses beyond their associated 3-dB-bandwidth (BW) ranges. Firstly. by means of a $\pi $ -shape network composed of a reflective first-order BPF and two shunt identical lossy bandstop filters (BSFs), a two-port-absorptive RF BPF is engineered. To further increase the stopband attenuation levels, the extension of this filter concept to higher-rejection BPFs using n cascaded reflective single-pole BPF units and ( ${n} +1$ ) replicas of a shunt lossy BSF is then approached. Subsequently, in order to equip such BPFs with higher-selectivity filtering responses, the development of input- and two-port-reflectionless BPFs with multiple transmission zeros (TZs) is addressed. Moreover, a multi-TZ flat-group-delay BPF with input-absorptive behavior is devised. It exploits a reflective BPF channel, which is shaped by a high-selectivity BPF unit with two close-to-passband TZs and a shunt series-LC resonator that produces an additional TZ, along with a shunt absorptive BSF in a complementary-diplexer-based topology. Finally, by cascading two duplicated high-selectivity BPFs and the associated absorptive BSFs with a modified shunt series-LC resonator in a back-to-back connection, a type of two-port-reflectionless BPF with multiple TZs is further engineered. Following this approach, a modified shunt lossy BSF instead of the previous shunt series-LC resonator is employed in the overall reflectionless BPF to obtain a sharper-rejection passband and flatter group delay versus the corresponding beyond-3-dB BW. The RF operational foundations of these absorptive BPFs are detailed with analyses of their relevant lumped-element-based equivalent circuits. Furthermore, proof-of-concept prototypes for the five suggested RF BPFs are simulated, built, and measured to experimentally validate their design concepts for application in power-efficient high-data-rate digital-communication systems.
数字通信GaAs技术中无源集成吸收扁平群延迟射频带通滤波器的设计与分析
提出了一种基于砷化镓(GaAs)技术的片上无源集成吸收扁平群延迟射频带通滤波器(bpf)。这些宽带bpf具有宽带准无反射行为以及超过其相关3db带宽(BW)范围的准恒定群延迟响应。首先。利用由一个反射一阶BPF和两个并联相同损耗带阻滤波器(bsf)组成的$\pi $形网络,设计了一个双端口吸收型RF BPF。为了进一步提高阻带衰减水平,将该滤波器概念扩展到使用n级联反射单极BPF单元和(${n} +1$)并联有损BPF的副本的更高抑制BPF。随后,为了使这种bpf具有更高选择性的滤波响应,研究了具有多个传输零点的输入和双端口无反射bpf的发展。此外,还设计了具有输入吸收特性的多tz平群延迟BPF。它利用了一个反射BPF通道,该通道由一个高选择性BPF单元组成,具有两个近通带TZ和一个产生额外TZ的分流系列lc谐振器,以及一个基于互补双工器的分流吸收BSF拓扑。最后,通过将两个重复的高选择性BPF和相关的吸收性bsf与一个改进的并联串联- lc谐振器串联在背靠背连接中,进一步设计了一种具有多个TZs的双端口无反射BPF。根据这种方法,在整体无反射BPF中使用改进的分流有损BSF代替之前的分流串联lc谐振器,以获得更锐利的抑制通带和更平坦的群延迟,而不是相应的超过3 db BW。详细介绍了这些吸收式bpf的射频工作基础,并分析了它们相关的基于集总元件的等效电路。此外,对五种建议的射频bpf的概念验证原型进行了模拟、构建和测量,以实验验证其设计概念在节能高数据速率数字通信系统中的应用。
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来源期刊
IEEE Transactions on Circuits and Systems I: Regular Papers
IEEE Transactions on Circuits and Systems I: Regular Papers 工程技术-工程:电子与电气
CiteScore
9.80
自引率
11.80%
发文量
441
审稿时长
2 months
期刊介绍: TCAS I publishes regular papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: - Circuits: Analog, Digital and Mixed Signal Circuits and Systems - Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic - Circuits and Systems, Power Electronics and Systems - Software for Analog-and-Logic Circuits and Systems - Control aspects of Circuits and Systems.
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