{"title":"Design and Analysis of Passive-Integrated Absorptive Flat-Group-Delay RF Bandpass Filters in GaAs Technology for Digital Communications","authors":"Nasrin Iranpour;Li Yang;Roberto Gómez-García;Xi Zhu","doi":"10.1109/TCSI.2025.3546509","DOIUrl":null,"url":null,"abstract":"A family of on-chip passive-integrated absorptive flat-group-delay RF bandpass filters (BPFs) in gallium arsenide (GaAs) technology is presented. These wideband BPFs feature broadband quasi-reflectionless behavior along with quasi-constant group-delay responses beyond their associated 3-dB-bandwidth (BW) ranges. Firstly. by means of a <inline-formula> <tex-math>$\\pi $ </tex-math></inline-formula>-shape network composed of a reflective first-order BPF and two shunt identical lossy bandstop filters (BSFs), a two-port-absorptive RF BPF is engineered. To further increase the stopband attenuation levels, the extension of this filter concept to higher-rejection BPFs using <italic>n</i> cascaded reflective single-pole BPF units and (<inline-formula> <tex-math>${n} +1$ </tex-math></inline-formula>) replicas of a shunt lossy BSF is then approached. Subsequently, in order to equip such BPFs with higher-selectivity filtering responses, the development of input- and two-port-reflectionless BPFs with multiple transmission zeros (TZs) is addressed. Moreover, a multi-TZ flat-group-delay BPF with input-absorptive behavior is devised. It exploits a reflective BPF channel, which is shaped by a high-selectivity BPF unit with two close-to-passband TZs and a shunt series-<italic>LC</i> resonator that produces an additional TZ, along with a shunt absorptive BSF in a complementary-diplexer-based topology. Finally, by cascading two duplicated high-selectivity BPFs and the associated absorptive BSFs with a modified shunt series-<italic>LC</i> resonator in a back-to-back connection, a type of two-port-reflectionless BPF with multiple TZs is further engineered. Following this approach, a modified shunt lossy BSF instead of the previous shunt series-<italic>LC</i> resonator is employed in the overall reflectionless BPF to obtain a sharper-rejection passband and flatter group delay versus the corresponding beyond-3-dB BW. The RF operational foundations of these absorptive BPFs are detailed with analyses of their relevant lumped-element-based equivalent circuits. Furthermore, proof-of-concept prototypes for the five suggested RF BPFs are simulated, built, and measured to experimentally validate their design concepts for application in power-efficient high-data-rate digital-communication systems.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 6","pages":"2639-2652"},"PeriodicalIF":5.2000,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems I: Regular Papers","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10916996/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A family of on-chip passive-integrated absorptive flat-group-delay RF bandpass filters (BPFs) in gallium arsenide (GaAs) technology is presented. These wideband BPFs feature broadband quasi-reflectionless behavior along with quasi-constant group-delay responses beyond their associated 3-dB-bandwidth (BW) ranges. Firstly. by means of a $\pi $ -shape network composed of a reflective first-order BPF and two shunt identical lossy bandstop filters (BSFs), a two-port-absorptive RF BPF is engineered. To further increase the stopband attenuation levels, the extension of this filter concept to higher-rejection BPFs using n cascaded reflective single-pole BPF units and (${n} +1$ ) replicas of a shunt lossy BSF is then approached. Subsequently, in order to equip such BPFs with higher-selectivity filtering responses, the development of input- and two-port-reflectionless BPFs with multiple transmission zeros (TZs) is addressed. Moreover, a multi-TZ flat-group-delay BPF with input-absorptive behavior is devised. It exploits a reflective BPF channel, which is shaped by a high-selectivity BPF unit with two close-to-passband TZs and a shunt series-LC resonator that produces an additional TZ, along with a shunt absorptive BSF in a complementary-diplexer-based topology. Finally, by cascading two duplicated high-selectivity BPFs and the associated absorptive BSFs with a modified shunt series-LC resonator in a back-to-back connection, a type of two-port-reflectionless BPF with multiple TZs is further engineered. Following this approach, a modified shunt lossy BSF instead of the previous shunt series-LC resonator is employed in the overall reflectionless BPF to obtain a sharper-rejection passband and flatter group delay versus the corresponding beyond-3-dB BW. The RF operational foundations of these absorptive BPFs are detailed with analyses of their relevant lumped-element-based equivalent circuits. Furthermore, proof-of-concept prototypes for the five suggested RF BPFs are simulated, built, and measured to experimentally validate their design concepts for application in power-efficient high-data-rate digital-communication systems.
期刊介绍:
TCAS I publishes regular papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: - Circuits: Analog, Digital and Mixed Signal Circuits and Systems - Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic - Circuits and Systems, Power Electronics and Systems - Software for Analog-and-Logic Circuits and Systems - Control aspects of Circuits and Systems.