{"title":"USCIM: Computing-in-Memory With Unipolar Switching SOT-MRAM","authors":"Haiwen Li;Enyi Yao;Pei Qin;Sheng Jiang","doi":"10.1109/TMAG.2025.3561873","DOIUrl":null,"url":null,"abstract":"This brief presents an arithmetic paradigm for computing-in-memory (CIM) using unipolar switching spin-orbit-torque magnetic random access memory (SOT-MRAM) devices. The proposed MRAM array comprised two transistors and one SOT magnetic tunnel junction (MTJ) cell and achieves basic Boolean logic operations [<sc>and</small>, <sc>xor</small>, <sc>or</small>, majority (MAJ)] and full-adder (FA) operations. The hybrid spintronics/CMOS simulation results show that the proposed designs improve latency and energy consumption by about 34%–132% and 212%–489% compared with the existing design, respectively. Monte Carlo simulations further prove the robustness of our design for the effectiveness of write/read operations.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 6","pages":"1-6"},"PeriodicalIF":1.9000,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Magnetics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10969079/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This brief presents an arithmetic paradigm for computing-in-memory (CIM) using unipolar switching spin-orbit-torque magnetic random access memory (SOT-MRAM) devices. The proposed MRAM array comprised two transistors and one SOT magnetic tunnel junction (MTJ) cell and achieves basic Boolean logic operations [and, xor, or, majority (MAJ)] and full-adder (FA) operations. The hybrid spintronics/CMOS simulation results show that the proposed designs improve latency and energy consumption by about 34%–132% and 212%–489% compared with the existing design, respectively. Monte Carlo simulations further prove the robustness of our design for the effectiveness of write/read operations.
期刊介绍:
Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.