USCIM: Computing-in-Memory With Unipolar Switching SOT-MRAM

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Haiwen Li;Enyi Yao;Pei Qin;Sheng Jiang
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引用次数: 0

Abstract

This brief presents an arithmetic paradigm for computing-in-memory (CIM) using unipolar switching spin-orbit-torque magnetic random access memory (SOT-MRAM) devices. The proposed MRAM array comprised two transistors and one SOT magnetic tunnel junction (MTJ) cell and achieves basic Boolean logic operations [and, xor, or, majority (MAJ)] and full-adder (FA) operations. The hybrid spintronics/CMOS simulation results show that the proposed designs improve latency and energy consumption by about 34%–132% and 212%–489% compared with the existing design, respectively. Monte Carlo simulations further prove the robustness of our design for the effectiveness of write/read operations.
基于单极开关SOT-MRAM的内存计算
摘要提出了一种利用单极开关自旋-轨道-转矩磁随机存取存储器(SOT-MRAM)器件实现内存计算的算法范式。所提出的MRAM阵列由两个晶体管和一个SOT磁隧道结(MTJ)单元组成,实现了基本的布尔逻辑运算[and, xor, or, majority (MAJ)]和全加法器(FA)运算。自旋电子学/CMOS混合仿真结果表明,与现有设计相比,所提设计的延迟和能耗分别提高了34% ~ 132%和212% ~ 489%。蒙特卡罗模拟进一步证明了我们的设计对于写/读操作的有效性的鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Magnetics
IEEE Transactions on Magnetics 工程技术-工程:电子与电气
CiteScore
4.00
自引率
14.30%
发文量
565
审稿时长
4.1 months
期刊介绍: Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
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