Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltage

IF 12.3 1区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Atushi Sato, Seira Yamaguchi, Akio Hasegawa, Yukihiro Shimoi, Tomoya Nakamura, Atsushi Wakamiya, Kazuhiro Marumoto
{"title":"Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltage","authors":"Atushi Sato, Seira Yamaguchi, Akio Hasegawa, Yukihiro Shimoi, Tomoya Nakamura, Atsushi Wakamiya, Kazuhiro Marumoto","doi":"10.1038/s41528-025-00424-5","DOIUrl":null,"url":null,"abstract":"<p>Tin-based perovskite solar cells (PSCs) are the most promising alternatives to toxic lead-based ones. However, the loss in open-circuit voltage (<i>V</i><sub>OC</sub>) remains an important issue. Improvement of <i>V</i><sub>OC</sub> has been achieved by using a fullerene derivative, indene-C<sub>60</sub> bisadduct (ICBA), as the electron transporting layer (ETL). For further <i>V</i><sub>OC</sub> improvement, the <i>V</i><sub>OC</sub> improvement mechanisms must be clarified. Herein, we show, at a molecular level, <i>V</i><sub>OC</sub> improvement mechanisms by an ICBA ETL in tin-based PSCs. Electron spin resonance spectroscopy reveals that electron diffusion from perovskite to ETL occurs at perovskite/ETL interfaces, producing unfavorable upward band-bending of perovskite. Employing ICBA with a shallower LUMO level suppresses the upward band-bending as well as reduces the energy offset with the conduction band minimum of perovskite. Suppressing this unfavorable upward band-bending reduces interface recombination at perovskite/ETL interfaces and contributes to <i>V</i><sub>OC</sub> improvement. These insights support efficient optimization of the charge-transporting layer for additional improvement of <i>V</i><sub>OC</sub>.</p>","PeriodicalId":48528,"journal":{"name":"npj Flexible Electronics","volume":"16 1","pages":""},"PeriodicalIF":12.3000,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj Flexible Electronics","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1038/s41528-025-00424-5","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Tin-based perovskite solar cells (PSCs) are the most promising alternatives to toxic lead-based ones. However, the loss in open-circuit voltage (VOC) remains an important issue. Improvement of VOC has been achieved by using a fullerene derivative, indene-C60 bisadduct (ICBA), as the electron transporting layer (ETL). For further VOC improvement, the VOC improvement mechanisms must be clarified. Herein, we show, at a molecular level, VOC improvement mechanisms by an ICBA ETL in tin-based PSCs. Electron spin resonance spectroscopy reveals that electron diffusion from perovskite to ETL occurs at perovskite/ETL interfaces, producing unfavorable upward band-bending of perovskite. Employing ICBA with a shallower LUMO level suppresses the upward band-bending as well as reduces the energy offset with the conduction band minimum of perovskite. Suppressing this unfavorable upward band-bending reduces interface recombination at perovskite/ETL interfaces and contributes to VOC improvement. These insights support efficient optimization of the charge-transporting layer for additional improvement of VOC.

Abstract Image

锡钙钛矿/富勒烯衍生物界面上的电子扩散及其对开路电压的影响
锡基钙钛矿太阳能电池(PSCs)是毒性铅基太阳能电池最有前途的替代品。然而,开路电压损耗(VOC)仍然是一个重要的问题。利用富勒烯衍生物吲哚- c60双合物(ICBA)作为电子传递层(ETL),改善了VOC。为了进一步改善挥发性有机化合物,必须明确改善挥发性有机化合物的机制。在此,我们展示了在分子水平上,ICBA ETL在锡基psc中的VOC改善机制。电子自旋共振谱分析表明,电子从钙钛矿向ETL的扩散发生在钙钛矿/ETL界面,使钙钛矿产生不利的向上带弯曲。采用较浅LUMO能级的ICBA抑制了向上的能带弯曲,并减少了与钙钛矿导带最小值的能量偏移。抑制这种不利的向上带弯曲减少了钙钛矿/ETL界面的界面重组,有助于改善VOC。这些见解支持有效地优化电荷传输层,以进一步改善VOC。
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来源期刊
CiteScore
17.10
自引率
4.80%
发文量
91
审稿时长
6 weeks
期刊介绍: npj Flexible Electronics is an online-only and open access journal, which publishes high-quality papers related to flexible electronic systems, including plastic electronics and emerging materials, new device design and fabrication technologies, and applications.
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