Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-05-27 DOI:10.1063/5.0261673

Rohith Soman, Mohamadali Malakoutian, Kelly Woo, Jeong-Kyu Kim, Thomas Andres Rodriguez, Rafael Perez Martinez, Matthew DeJarld, Maher Tahhan, Jarrod Valliancourt, Eduardo M. Chumbes, Jeffrey Laroche, Srabanti Chowdhury

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引用次数: 0

Abstract

Self-heating and related degradation in performance and reliability are serious concerns in realizing higher output power density in microwave power amplifiers. We demonstrated the integration of polycrystalline diamond on a fully fabricated metal-polar Schottky-gated AlGaN/GaN microwave transistor for the device-level cooling solution. The thermal budget of the diamond integration process is carefully optimized so as not to degrade the electrical performance of the device. Gate resistance thermometry measurement performed on a 1 × 200 μm2 device showed an average 111 °C lower channel temperature from 488 °C for the devices with diamond at 24 W/mm power dissipation than those without diamond. The gate leakage current of the device increased only by 4.8 times with the optimized diamond growth process. An extrinsic Ft/Fmax of 23/33 GHz was measured on devices with diamond compared to 23/36 GHz on devices without diamond. Diamond integration and gate leakage current modeling were also discussed on a 10-finger HEMT.

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在AlGaN/GaN射频HEMT上集成顶部低温金刚石，用于器件级冷却

在实现高输出功率密度的微波功率放大器中，自热及其相关的性能和可靠性下降是一个严重的问题。我们展示了将多晶金刚石集成在完全制造的金属极性肖特基门控AlGaN/GaN微波晶体管上，用于器件级冷却解决方案。为了不降低器件的电性能，对金刚石集成工艺的热预算进行了精心优化。在1 × 200 μm2器件上进行的栅极电阻测温表明，在功耗为24 W/mm时，有金刚石器件的栅极通道温度比无金刚石器件的栅极通道温度平均低111℃，为488℃。经过优化的金刚石生长工艺，器件栅漏电流仅提高了4.8倍。外部Ft/Fmax在有金刚石器件上的测量值为23/33 GHz，而在没有金刚石器件上的测量值为23/36 GHz。在10指HEMT上讨论了金刚石集成和栅极漏电流建模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.