Impact of transition metal doping on the optical characteristics of Se–Te thin film

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Nisha Kumari, S. Fouad, H. Atiya, Neeraj Mehta
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引用次数: 0

Abstract

The optical properties of Se80−xTe20TMx thin films (Where, TM = Fe, Co, Ni, Cu, and x = 0 or 2) were studied for their compositional dependence. Binary and ternary thin films were deposited onto preheated glass substrates using the thermal evaporation method under high vacuum conditions (~ 10−6 Torr). Through the collection of observational spectral data for both reflectance and transmittance across 200–2500 nm using an Ultraviolet (UV)—spectrophotometer, we evaluated the optical properties of the prepared thin films. Distinct samples exhibited unique optical characteristics. The optical absorption coefficient (α), refractive index (n), and extinction coefficient (k) were determined from the transmission (T(λ)) and absorption measurements. The analysis includes various linear optical parameters, such as the refractive index, extinction coefficient, real and imaginary parts of the dielectric constant, and loss tangent, all discussed with wavelength. The optical band gap \({(E}_{g}^{opt})\) and Urbach tail \({(E}_{u})\) have been determined through the analysis of the spectral variation in the dispersion characteristics. This calculation provides critical insight into the electronic structure and disorder within the material. The current samples exhibit the indirect optical transition, which is confirmed by the transition power factor m. Using the theoretical Wemple-DiDomenico model, we calculated the static refractive index (n), oscillator energy (E0), and dispersion energy (Ed). The refractive index dispersion data adhered to the single oscillator model, which facilitated the determination of the dispersion parameters and the high-frequency dielectric constant. Further, the nonlinear characteristics of the samples are evaluated through their susceptibility and nonlinear refractive index.

过渡金属掺杂对Se-Te薄膜光学特性的影响
研究了Se80−xTe20TMx薄膜(TM = Fe, Co, Ni, Cu, x = 0或2)的光学性质。在高真空(10−6 Torr)条件下,采用热蒸发法将二元和三元薄膜沉积在预热的玻璃衬底上。利用紫外分光光度计收集200 - 2500nm波段的反射率和透射率的观测光谱数据,对制备的薄膜的光学性能进行了评价。不同的样品表现出独特的光学特性。光吸收系数(α)、折射率(n)和消光系数(k)由透射(T(λ))和吸收测量值确定。分析包括各种线性光学参数,如折射率、消光系数、介电常数的实部和虚部、损耗正切等,都与波长有关。通过对色散特性的光谱变化分析,确定了光学带隙\({(E}_{g}^{opt})\)和乌尔巴赫尾\({(E}_{u})\)。这种计算提供了对材料中的电子结构和无序性的关键见解。利用Wemple-DiDomenico理论模型,我们计算了静态折射率(n)、振子能量(E0)和色散能量(Ed)。折射率色散数据符合单振模型,便于色散参数和高频介电常数的确定。此外,通过样品的磁化率和非线性折射率来评价样品的非线性特性。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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