{"title":"Impact of transition metal doping on the optical characteristics of Se–Te thin film","authors":"Nisha Kumari, S. Fouad, H. Atiya, Neeraj Mehta","doi":"10.1007/s11082-025-08262-5","DOIUrl":null,"url":null,"abstract":"<div><p>The optical properties of Se<sub>80−x</sub>Te<sub>20</sub>TM<sub>x</sub> thin films (Where, TM = Fe, Co, Ni, Cu, and x = 0 or 2) were studied for their compositional dependence. Binary and ternary thin films were deposited onto preheated glass substrates using the thermal evaporation method under high vacuum conditions (~ 10<sup>−6</sup> Torr). Through the collection of observational spectral data for both reflectance and transmittance across 200–2500 nm using an Ultraviolet (UV)—spectrophotometer, we evaluated the optical properties of the prepared thin films. Distinct samples exhibited unique optical characteristics. The optical absorption coefficient (<i>α</i>), refractive index (<i>n</i>), and extinction coefficient (<i>k</i>) were determined from the transmission (<i>T(λ)</i>) and absorption measurements. The analysis includes various linear optical parameters, such as the refractive index, extinction coefficient, real and imaginary parts of the dielectric constant, and loss tangent, all discussed with wavelength. The optical band gap <span>\\({(E}_{g}^{opt})\\)</span> and Urbach tail <span>\\({(E}_{u})\\)</span> have been determined through the analysis of the spectral variation in the dispersion characteristics. This calculation provides critical insight into the electronic structure and disorder within the material. The current samples exhibit the indirect optical transition, which is confirmed by the transition power factor <i>m</i>. Using the theoretical Wemple-DiDomenico model, we calculated the static refractive index (<i>n</i>), oscillator energy (<i>E</i><sub><i>0</i></sub>), and dispersion energy (<i>E</i><sub><i>d</i></sub>). The refractive index dispersion data adhered to the single oscillator model, which facilitated the determination of the dispersion parameters and the high-frequency dielectric constant. Further, the nonlinear characteristics of the samples are evaluated through their susceptibility and nonlinear refractive index.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08262-5","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The optical properties of Se80−xTe20TMx thin films (Where, TM = Fe, Co, Ni, Cu, and x = 0 or 2) were studied for their compositional dependence. Binary and ternary thin films were deposited onto preheated glass substrates using the thermal evaporation method under high vacuum conditions (~ 10−6 Torr). Through the collection of observational spectral data for both reflectance and transmittance across 200–2500 nm using an Ultraviolet (UV)—spectrophotometer, we evaluated the optical properties of the prepared thin films. Distinct samples exhibited unique optical characteristics. The optical absorption coefficient (α), refractive index (n), and extinction coefficient (k) were determined from the transmission (T(λ)) and absorption measurements. The analysis includes various linear optical parameters, such as the refractive index, extinction coefficient, real and imaginary parts of the dielectric constant, and loss tangent, all discussed with wavelength. The optical band gap \({(E}_{g}^{opt})\) and Urbach tail \({(E}_{u})\) have been determined through the analysis of the spectral variation in the dispersion characteristics. This calculation provides critical insight into the electronic structure and disorder within the material. The current samples exhibit the indirect optical transition, which is confirmed by the transition power factor m. Using the theoretical Wemple-DiDomenico model, we calculated the static refractive index (n), oscillator energy (E0), and dispersion energy (Ed). The refractive index dispersion data adhered to the single oscillator model, which facilitated the determination of the dispersion parameters and the high-frequency dielectric constant. Further, the nonlinear characteristics of the samples are evaluated through their susceptibility and nonlinear refractive index.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.