S. Maadadi, M. E. A. Benamar, Y. Mebdoua, K. Derkaoui, F. Lekoui, J. M. Nunzi, H. Derbal Habak, M. El Ganaoui, N. Belkhalfa
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引用次数: 0
Abstract
This study explores the optical, dielectric, and electrical properties of ZnO layers deposited on cold sprayed Al layer, emphasizing their potential for optoelectronic and photovoltaic applications. Optical measurements revealed a reduction in the ZnO bandgap to approximately 2.45 eV when interfaced with Al, broadening its absorption into the visible range and enhancing light-harvesting capabilities. Dielectric analysis showed a significant increase in the real part of the dielectric constant (εr), reaching values up to 2.8 in the visible spectrum, indicative of polarization behavior. The imaginary part (εi) demonstrated enhanced light absorption, further supported by increased optical conductivity (σopt). Electrical conductivity analysis revealed improved charge transport properties, highlighting the ZnO/Al system’s efficiency in facilitating charge transfer. To evaluate its photovoltaic potential, the ZnO/Al system was integrated into a simulated perovskite solar cell as the electron transport layer (ETL). The simulated device achieved a power conversion efficiency (PCE) of 27.1%, with Jsc = 28.2 mA/cm2, Voc = 1.2 V, and FF = 82%. Optimization of the ZnO thickness revealed that a 100 nm layer would provide the best performance, balancing light absorption, charge transport, and minimal resistance. The external quantum efficiency (EQE) spectrum demonstrated a peak response (~ 90%) in the visible range (400–750 nm), confirming the efficiency of charge collection and transport. These findings highlight the superior optical, dielectric, and electrical properties of the ZnO/Al system, making it a promising candidate for high-efficiency optoelectronic and photovoltaic devices. The results provide a solid foundation for further development of ZnO-based materials in renewable energy applications.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.