Structural and optical analysis of eosin Y-doped polymeric blend (PVA/PVP) films for solar energy: towards multi-bandgap solar absorbing materials

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
T. H. AlAbdulaal, Ali Almoadi, V. Ganesh, Mohammed S. Alqahtani, H. Y. Zahran, Samer H. Zyoud, Q. Z. AlSalim, I. S. Yahia
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引用次数: 0

Abstract

The progression of the optical field employing dye materials has created remarkable attention in optoelectronics technology. The polymeric blend of Polyvinyl alcohol (PVA)/Polyvinyl pyrrolidone (PVP) was doped with various weight concentrations of eosin Y (EY) dye ((0, 0.06, 0.3, 0.6, 2.96, 5.925, and 17.77 wt%), using a simple, low-cost, effective, and friendly solution casting method. The synthesised EY-PVA/PVP polymeric films’ semi-crystallinity and the impact of the various doped concentrations on the degree of crystallinity size, dislocation, and lattice strain were both validated by the X-ray diffraction (XRD) results. The functional chemical groups and significant intermolecular interaction between the host PVA/PVP polymeric matrix and the filler eosin Y dye were validated by the FT-IR approach. The significant impacts of different EY dye weight percentages on the optical characteristics, absorbance, transmittance, absorption coefficient, and optical energy direct/indirect bandgaps of the suggested EY: PVA/PVP composite polymeric films were examined using UV–Vis-NIR spectrophotometry. The transmission was recorded to be 87% for the 17.77 wt% EY-doped composite at 1300 nm. The absorption spectra depicted three intense peaks at 517, 313, and 199 nm wavelengths, which were dropped with the increase in wt% concentration for the EY-doped PVA/PVP films. Another standout characteristic is the attenuation of total absorption, visible as a cut-off absorbance in approximately 600 nm wavelength. The optical energy bandgap for the host PVA/PVP blend polymer was about 5.19 eV, while the indirect value was 4.96 eV. Directly bandgaps for the EY-doped PVA/PVP composites lowered from 5.35 eV to 1.94 eV, where the second region of the direct energy gap is in the range of 3.71–2.69 eV, and the third is in the 2.24–1.94 eV range. The optical limiting effects of two laser sources (532 nm green diode) and (635 nm He–Ne) using a (fixed sample holder) Z-scan system were studied for the planned EY-doped PVA/PVP polymeric films. The remarkable structural and amazing optical results of the novel EY-doped PVA/PVP composite polymeric films have approved the ability for optoelectronics, cut-off filters, solar cells, LEDs, communication devices, optical switches, and optical laser limiters.

伊红y掺杂聚合物共混物(PVA/PVP)太阳能薄膜的结构和光学分析:面向多带隙太阳能吸收材料
利用染料材料的光学领域的发展引起了光电子技术领域的极大关注。以不同质量浓度的伊红Y (EY)染料((0、0.06、0.3、0.6、2.96、5.925和17.77 wt%)掺杂聚乙烯醇(PVA)/聚乙烯吡罗烷酮(PVP)共混物,采用简单、低成本、高效、友好的溶液浇铸法。x射线衍射(XRD)结果验证了所合成的EY-PVA/PVP聚合物薄膜的半结晶度以及不同掺杂浓度对结晶度、位错大小、晶格应变的影响。通过FT-IR方法验证了宿主PVA/PVP聚合物基质与填充剂伊红Y染料之间的功能化学基团和显著的分子间相互作用。采用紫外-可见-近红外分光光度法考察了不同EY染料重量百分比对所制备的EY: PVA/PVP复合聚合物薄膜的光学特性、吸光度、透过率、吸收系数和光能直接/间接带隙的显著影响。在1300 nm处,掺入17.77 wt% ey的复合材料透射率为87%。在517、313和199 nm波长处,随着wt%浓度的增加,PVA/PVP薄膜的吸收光谱呈下降趋势。另一个突出的特点是总吸收的衰减,在大约600纳米波长的截止吸光度可见。宿主PVA/PVP共混聚合物的光能带隙约为5.19 eV,间接带隙为4.96 eV。掺ey的PVA/PVP复合材料的直接能隙从5.35 eV降低到1.94 eV,其中直接能隙的第二区域在3.71 ~ 2.69 eV之间,第三区域在2.24 ~ 1.94 eV之间。研究了两种激光源(532 nm绿色二极管)和(635 nm He-Ne)在(固定样品夹)z扫描系统下对计划掺杂的PVA/PVP聚合物薄膜的光限效应。新型掺杂ey的PVA/PVP复合聚合物薄膜的结构和光学效果显著,证明了其在光电子、截止滤光片、太阳能电池、led、通信器件、光开关和光学激光限制器等领域的应用能力。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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