On the possible current transport mechanisms, Energy-dependent distribution profile of interface states, and temperature sensitivity in Au/(PEG:Er–MnFe2O4)/n–Si structures

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-26 DOI:10.1007/s10854-025-14923-8

H. G. Çetinkaya, Yusuf Badali, Ş. Altındal

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引用次数: 0

Abstract

The Au/(PEG:Er–MnFe₂O₄)/n–Si junctions have been constructed and their possible charge/current transport mechanisms (CTMs) investigated across temperatures ranging from 80 to 340 K and a ± 3 V bias range using the I–V measurements. The forward bias semi-logarithmic I–V curves exhibited two distinct linear regimes. The semilogarithmic I–V characteristics show that while ideality factor (n) declines with inclining temperature, barrier height (BH) inclines. The thermionic emission model with double Gaussian dispersion (DGD) of the BHs was able to successfully explain such temperature-dependent changes in the BH and n. Plots of Φ_B0-q/2kT, Φ_B0-n, and n⁻¹-q/2kT curves showed two linear-portions, indicative of a DGD. These findings suggest that the fabricated Au/(PEG:Er–MnFe₂O₄)/n–Si diode could serve effectively as a temperature-sensor (TS) in whole temperature range. The distribution profile of the interface traps (D_it) in the forbidden energy band was obtained from the Card&Rhoderick model by utilizing I–V data, considering the voltage-dependent Φ_B(V) and n(V) values for each temperature. The observed declines with inclining temperature and shifting positions of them was attributed to the restructure/reorder of D_it under the temperature effect. The obtained results suggest that the fabricated these structures are very sensitive to temperature and voltage and so can be used as a temperature application.

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Au/(PEG: Er-MnFe2O4)/ n-Si结构中可能的电流输运机制、界面态能量依赖分布和温度敏感性

构建了Au/(PEG: Er-MnFe2O4)/ n-Si结，并利用I-V测量在80 - 340 K和±3 V偏置范围内研究了其可能的电荷/电流传输机制（CTMs）。正偏半对数I-V曲线表现出两种不同的线性形式。半对数I-V特性表明，理想因子n随温度的升高而减小，势垒高度BH随温度的升高而减小。黑洞的双高斯色散热离子发射模型（DGD）能够成功地解释黑洞和n的这种温度依赖变化。ΦB0-q/2kT、ΦB0-n和n−1-q/2kT曲线显示了两个线性部分，表明存在DGD。这些结果表明，所制备的Au/(PEG: Er-MnFe2O4)/ n-Si二极管可以在整个温度范围内有效地用作温度传感器（TS）。利用I-V数据从Card&；Rhoderick模型中获得了禁止能带的界面陷阱（Dit）分布曲线，并考虑了每个温度下与电压相关的ΦB(V)和n(V)值。随着温度的下降和位置的变化，Dit在温度作用下发生了重构/重排序。实验结果表明，该结构对温度和电压非常敏感，可用于温度测量。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.