Influence of Cd on structural, morphological, optical, and electrical properties of ZnS thin films

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-26 DOI:10.1007/s10854-025-14969-8

Ravi Sankar Reddy Mummadi, Kaleemulla Shaik

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引用次数: 0

Abstract

This study concentrated on the synthesis and detailed characterization of Zn\(_{1-x}\)Cd\(_{x}\)S thin films prepared using the thermal evaporation technique. The thin films were analyzed for their structural, morphological, elemental, surface roughness, topographical, optical, and electrical properties using XRD, FE-SEM, EDAX, AFM, UV–Vis spectroscopy, photoluminescence (PL), Hall effect measurements, and I–V measurements, respectively. XRD patterns confirmed that the structure of Zn\(_{1-x}\)Cd\(_{x}\)S is cubic, while FE-SEM images revealed the complete growth phenomenon of the thin films. EDAX spectra verified the presence of Zn, S, and Cd in the samples. AFM measurements revealed that the RMS roughness of the Zn\(_{1-x}\)Cd\(_{x}\)S films decreased from 13.59 to 12.83 nm with dopant concentration. Absorption and energy band gaps were analyzed using UV–Vis spectroscopy. The investigation of photoluminescence (PL) spectra reveals peak intensity decreased with increasing dopant concentration, indicating a reduction in defect centers. Hall effect studies and I–V measurements (in dark and light) confirmed that the resistivity decreased and the electrical current of Zn\(_{1-x}\)Cd\(_{x}\)S thin films increased with higher dopant concentrations.

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镉对ZnS薄膜结构、形态、光学和电学性能的影响

本文主要研究了热蒸发法制备Zn \(_{1-x}\) Cd \(_{x}\) S薄膜的合成和详细表征。采用XRD、FE-SEM、EDAX、AFM、UV-Vis光谱、光致发光（PL）、霍尔效应测量和I-V测量分别对薄膜的结构、形态、元素、表面粗糙度、形貌、光学和电学性能进行了分析。XRD谱图证实了Zn \(_{1-x}\) Cd \(_{x}\) S为立方结构，FE-SEM图显示了薄膜的完整生长现象。EDAX光谱证实样品中存在Zn、S和Cd。AFM测试表明，随着掺杂剂浓度的增加，Zn \(_{1-x}\) Cd \(_{x}\) S膜的RMS粗糙度从13.59 nm降低到12.83 nm。利用紫外可见光谱分析了吸收和能带间隙。光致发光（PL）光谱研究表明，随着掺杂浓度的增加，峰强度降低，表明缺陷中心减少。霍尔效应研究和I-V测量（在黑暗和光照下）证实，随着掺杂浓度的增加，Zn \(_{1-x}\) Cd \(_{x}\) S薄膜的电阻率降低，电流增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.