Spectral regulation of Sn/Br-co-doped perovskite nanocrystalline glass

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hong Liang, Guoqiang Yin, Suiyuan Dong, Guoying Zhao, Yufeng Liu, Jingshan Hou, Yongzheng Fang
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引用次数: 0

Abstract

The Sn/Br co-doped CsPbI3 borosilicate glass was synthesized using the melt quenching method. It is revealed by transmission electron microscopy (TEM) and X-ray diffraction (XRD) results that Sn and Br are incorporated into the B-site and X-site of the nanocrystals, respectively Furthermore, it is particularly noteworthy that as the doping content rises, Sn and Br interact with Cs to generate two distinct types of nanocrystals (NCs), namely CsPbBr3 and Cs (SnBr3), which coexist with CsPbI3 within the glass matrix. This finding is further substantiated by the data obtained from fluorescence microscopy. In correspondence with the structural alterations, as the doping concentration rises, a blue-shift phenomenon is initially manifested in the emission spectrum of the sample. After a certain concentration is reached, the superposition of different emission peaks begins to be shown by the sample, which stems from the co-existence of mixed-phase NCs within the system as is revealed by XRD and TEM. A highly effective approach for the spectral regulation of CsPbI3 glass is furnished by the incorporation of Sn and Br ions. Not only can it enable the shift of monochromatic spectra, but it also holds the potential to render a single material capable of white-light emission. Meanwhile, the popularization and application of this NCs glass are also supported by excellent physical and chemical stability.

Sn/ br共掺钙钛矿纳米晶玻璃的光谱调控
采用熔体淬火法制备了Sn/Br共掺CsPbI3硼硅酸盐玻璃。透射电镜(TEM)和x射线衍射(XRD)结果显示,Sn和Br分别掺入到纳米晶体的b位和x位,尤其值得注意的是,随着掺杂量的增加,Sn和Br与Cs相互作用,生成了两种不同类型的纳米晶体(NCs),即CsPbBr3和Cs (SnBr3),它们与CsPbI3共存于玻璃基体内。从荧光显微镜获得的数据进一步证实了这一发现。与结构变化相对应的是,随着掺杂浓度的升高,样品的发射光谱开始出现蓝移现象。达到一定浓度后,样品开始出现不同发射峰的叠加,XRD和TEM分析表明,这是体系内混合相NCs共存的结果。在CsPbI3玻璃中掺入Sn和Br离子是一种非常有效的光谱调控方法。它不仅可以实现单色光谱的转移,而且还具有使单一材料能够发出白光的潜力。同时,优异的物理和化学稳定性也为这种纳米玻璃的推广和应用提供了支持。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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