{"title":"Spectral regulation of Sn/Br-co-doped perovskite nanocrystalline glass","authors":"Hong Liang, Guoqiang Yin, Suiyuan Dong, Guoying Zhao, Yufeng Liu, Jingshan Hou, Yongzheng Fang","doi":"10.1007/s10854-025-14924-7","DOIUrl":null,"url":null,"abstract":"<div><p>The Sn/Br co-doped CsPbI<sub>3</sub> borosilicate glass was synthesized using the melt quenching method. It is revealed by transmission electron microscopy (TEM) and X-ray diffraction (XRD) results that Sn and Br are incorporated into the B-site and X-site of the nanocrystals, respectively Furthermore, it is particularly noteworthy that as the doping content rises, Sn and Br interact with Cs to generate two distinct types of nanocrystals (NCs), namely CsPbBr<sub>3</sub> and Cs (SnBr<sub>3</sub>), which coexist with CsPbI<sub>3</sub> within the glass matrix. This finding is further substantiated by the data obtained from fluorescence microscopy. In correspondence with the structural alterations, as the doping concentration rises, a blue-shift phenomenon is initially manifested in the emission spectrum of the sample. After a certain concentration is reached, the superposition of different emission peaks begins to be shown by the sample, which stems from the co-existence of mixed-phase NCs within the system as is revealed by XRD and TEM. A highly effective approach for the spectral regulation of CsPbI<sub>3</sub> glass is furnished by the incorporation of Sn and Br ions. Not only can it enable the shift of monochromatic spectra, but it also holds the potential to render a single material capable of white-light emission. Meanwhile, the popularization and application of this NCs glass are also supported by excellent physical and chemical stability.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14924-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The Sn/Br co-doped CsPbI3 borosilicate glass was synthesized using the melt quenching method. It is revealed by transmission electron microscopy (TEM) and X-ray diffraction (XRD) results that Sn and Br are incorporated into the B-site and X-site of the nanocrystals, respectively Furthermore, it is particularly noteworthy that as the doping content rises, Sn and Br interact with Cs to generate two distinct types of nanocrystals (NCs), namely CsPbBr3 and Cs (SnBr3), which coexist with CsPbI3 within the glass matrix. This finding is further substantiated by the data obtained from fluorescence microscopy. In correspondence with the structural alterations, as the doping concentration rises, a blue-shift phenomenon is initially manifested in the emission spectrum of the sample. After a certain concentration is reached, the superposition of different emission peaks begins to be shown by the sample, which stems from the co-existence of mixed-phase NCs within the system as is revealed by XRD and TEM. A highly effective approach for the spectral regulation of CsPbI3 glass is furnished by the incorporation of Sn and Br ions. Not only can it enable the shift of monochromatic spectra, but it also holds the potential to render a single material capable of white-light emission. Meanwhile, the popularization and application of this NCs glass are also supported by excellent physical and chemical stability.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.