Qiao Su , Hao Lin , Genshun Wang , Mengjie Xu , Jiayu Duan , Xiaoyu Deng , Hua Wu , Tingting Wang , Guang Han , Chaowei Xue , Xixiang Xu , Pingqi Gao
{"title":"Contactless characterization of polarity boundary recombination on silicon heterojunction back contact solar cells","authors":"Qiao Su , Hao Lin , Genshun Wang , Mengjie Xu , Jiayu Duan , Xiaoyu Deng , Hua Wu , Tingting Wang , Guang Han , Chaowei Xue , Xixiang Xu , Pingqi Gao","doi":"10.1016/j.solmat.2025.113738","DOIUrl":null,"url":null,"abstract":"<div><div>Silicon heterojunction back contact (HBC) solar cell has an apparent advantage in power conversion efficiency (PCE) due to the efficient surface passivation and the avoided electrode shading. However, such configuration brings an unprecedented carrier recombination loss at the polarity boundary (PB) of selective contacts. PB recombination can make the ideality factor at maximum power point (MPP) evidently exceed 1, resulting in lower pseudo fill factors and PCE. Conventional characterization is confined to electrical contact, not applicable to the unformed cells. Here, a contactless method based on regional minority carrier lifetime measurement is provided, with the monitoring cell comprising separated regions of hole-selective contact (HSC), electron-selective contact (ESC), Gap and HSC + Gap. Its validity and reliability are demonstrated. This research holds guiding significance in quantitatively evaluating PB effect of HBC solar cells.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"291 ","pages":"Article 113738"},"PeriodicalIF":6.3000,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Energy Materials and Solar Cells","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927024825003393","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0
Abstract
Silicon heterojunction back contact (HBC) solar cell has an apparent advantage in power conversion efficiency (PCE) due to the efficient surface passivation and the avoided electrode shading. However, such configuration brings an unprecedented carrier recombination loss at the polarity boundary (PB) of selective contacts. PB recombination can make the ideality factor at maximum power point (MPP) evidently exceed 1, resulting in lower pseudo fill factors and PCE. Conventional characterization is confined to electrical contact, not applicable to the unformed cells. Here, a contactless method based on regional minority carrier lifetime measurement is provided, with the monitoring cell comprising separated regions of hole-selective contact (HSC), electron-selective contact (ESC), Gap and HSC + Gap. Its validity and reliability are demonstrated. This research holds guiding significance in quantitatively evaluating PB effect of HBC solar cells.
期刊介绍:
Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.