High-Performance Memristors Based on Ordered Imine-Linked Two-Dimensional Covalent Organic Frameworks for Neuromorphic Computing

IF 24.5 Q1 CHEMISTRY, PHYSICAL
Da Huo, Zhangjie Gu, Bailing Song, Yimeng Yu, Mengqi Wang, Lanhao Qin, Huicong Li, Decai Ouyang, Shikun Xiao, Wenhua Hu, Jinsong Wu, Yuan Li, Xiaodong Chi, Tianyou Zhai
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Abstract

Covalent organic frameworks (COFs) have emerged as highly promising materials for high-performance memristors due to their exceptional stability, molecular design flexibility, and tunable pore structures. However, the development of COF memristors faces persistent challenges stemming from the structural disorder and quality control of COF films, which hinder the effective regulation of active metal ion migration during resistive switching. Herein, we report the synthesis of high-quality, long-range ordered, imine-linked two-dimensional (2D) COFTP-TD film via the innovative surface-initiated polymerization (SIP) strategy. The long-range ordered one-dimensional (1D) nanochannels within 2D COFTP-TD film facilitate the stable and directed growth of conductive filaments (CFs), further enhanced by imine–CFs coordination effects. As a result, the fabricated memristor devices exhibit exceptional multilevel nonvolatile memory performance, achieving an ON/OFF ratio of up to 106 and a retention time exceeding 2.0 × 105 s, marking a significant breakthrough in porous organic polymer (POP) memristors. Furthermore, the memristors demonstrate high-precision waveform data recognition with an accuracy of 92.17%, comparable to software-based recognition systems, highlighting its potential in advanced signal processing tasks. This study establishes a robust foundation for the development of high-performance COF memristors and significantly broadens their application potential in neuromorphic computing.

基于有序亚胺连接二维共价有机框架的高性能忆阻器用于神经形态计算
共价有机框架(COFs)由于其优异的稳定性、分子设计灵活性和可调节的孔隙结构,已成为高性能忆阻器的极有前途的材料。然而,由于COF薄膜的结构混乱和质量控制,阻碍了对电阻开关过程中活性金属离子迁移的有效调控,COF忆阻器的发展面临着持续的挑战。在此,我们报告了通过创新的表面引发聚合(SIP)策略合成高质量,远程有序,亚胺连接的二维(2D) COFTP-TD薄膜。二维COFTP-TD薄膜内的远程有序一维纳米通道促进了导电细丝(CFs)的稳定和定向生长,亚胺- CFs的配位效应进一步增强了这一特性。因此,所制备的忆阻器器件表现出优异的多电平非易失性存储性能,实现了高达106的ON/OFF比和超过2.0 × 105 s的保持时间,标志着多孔有机聚合物(POP)忆阻器的重大突破。此外,该忆阻器显示出高精度的波形数据识别精度为92.17%,与基于软件的识别系统相当,突出了其在高级信号处理任务中的潜力。该研究为高性能COF记忆电阻器的发展奠定了坚实的基础,并显著拓宽了其在神经形态计算中的应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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