Effects of Ni addition on microstructure and reliability of full (Cu,Ni)6Sn5 IMC interconnects

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-25 DOI:10.1007/s10854-025-14932-7

P. Liu, J. Ren, M. L. Huang

{"title":"Effects of Ni addition on microstructure and reliability of full (Cu,Ni)6Sn5 IMC interconnects","authors":"P. Liu, J. Ren, M. L. Huang","doi":"10.1007/s10854-025-14932-7","DOIUrl":null,"url":null,"abstract":"<div>Full intermetallic compound (IMC) interconnects have emerged as a promising die-attach solution for third-generation semiconductor power devices due to their superior high-temperature stability. This study demonstrated the fabrication of Cu/(Cu,Ni)6Sn5/Cu full IMC interconnects using the current driven bonding (CDB) method with Sn-0.1Ni solder, focusing on microstructural evolution and electromigration (EM) resistance. Systematic analysis of liquid–solid EM behavior under high current stressing (1.0 × 104 A/cm2) revealed that the dopant of Ni significantly suppressed the growth of anode (Cu,Ni)3Sn IMCs, yielding a thickness of 1.54 µm compared to 3.13 µm for the cathode Cu3Sn IMCs. EM testing (150 °C, 1.0 × 104 A/cm2, 500 h) demonstrated exceptional stability, with the anode (Cu,Ni)3Sn IMCs increasing by only 0.47 μm versus 1.95 µm for the cathode Cu3Sn IMCs, and limited coarsening of (Cu,Ni)6Sn5 grains, with an average grain size of 11.72 µm in as-fabricated state increasing to 15.08 µm after current stressing. High shear strength was achieved for as-fabricated full (Cu,Ni)6Sn5 IMC interconnects (58.7 MPa) and was maintained after aging (55.5 MPa) and current stressing (51.3 MPa). These results highlight the CDB method with Sn-0.1Ni solder as an effective strategy for fabricating full IMC interconnects with high strength and enhanced EM reliability.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 15","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14932-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Full intermetallic compound (IMC) interconnects have emerged as a promising die-attach solution for third-generation semiconductor power devices due to their superior high-temperature stability. This study demonstrated the fabrication of Cu/(Cu,Ni)₆Sn₅/Cu full IMC interconnects using the current driven bonding (CDB) method with Sn-0.1Ni solder, focusing on microstructural evolution and electromigration (EM) resistance. Systematic analysis of liquid–solid EM behavior under high current stressing (1.0 × 10⁴ A/cm²) revealed that the dopant of Ni significantly suppressed the growth of anode (Cu,Ni)₃Sn IMCs, yielding a thickness of 1.54 µm compared to 3.13 µm for the cathode Cu₃Sn IMCs. EM testing (150 °C, 1.0 × 10⁴ A/cm², 500 h) demonstrated exceptional stability, with the anode (Cu,Ni)₃Sn IMCs increasing by only 0.47 μm versus 1.95 µm for the cathode Cu₃Sn IMCs, and limited coarsening of (Cu,Ni)₆Sn₅ grains, with an average grain size of 11.72 µm in as-fabricated state increasing to 15.08 µm after current stressing. High shear strength was achieved for as-fabricated full (Cu,Ni)₆Sn₅ IMC interconnects (58.7 MPa) and was maintained after aging (55.5 MPa) and current stressing (51.3 MPa). These results highlight the CDB method with Sn-0.1Ni solder as an effective strategy for fabricating full IMC interconnects with high strength and enhanced EM reliability.

查看原文本刊更多论文

Ni添加对全（Cu,Ni）6Sn5 IMC互连组织和可靠性的影响

由于具有优异的高温稳定性，全金属间化合物（IMC）互连已成为第三代半导体功率器件的一种有前途的封装解决方案。本研究采用电流驱动键合（CDB）方法，以Sn-0.1Ni焊料制备Cu/(Cu,Ni)6Sn5/Cu全IMC互连，重点研究了微结构演变和电迁移（EM）电阻。系统分析了高电流应力（1.0 × 104 A/cm2）下的液固EM行为，发现Ni的掺杂显著抑制了阳极（Cu,Ni）3Sn IMCs的生长，其厚度为1.54µm，而阴极Cu3Sn IMCs的厚度为3.13µm。EM测试（150°C, 1.0 × 104 A/cm2, 500 h）显示了优异的稳定性，阳极（Cu,Ni）3Sn IMCs仅增加了0.47 μm，而阴极Cu3Sn IMCs增加了1.95 μm，并且（Cu,Ni）6Sn5晶粒的粗化程度有限，在加工状态下的平均晶粒尺寸从11.72 μm增加到15.08 μm。制备的全（Cu,Ni）6Sn5 IMC互连具有较高的抗剪强度（58.7 MPa），并在时效（55.5 MPa）和电流应力（51.3 MPa）后保持较高的抗剪强度。这些结果表明，使用Sn-0.1Ni焊料的CDB方法是制造具有高强度和增强EM可靠性的全IMC互连的有效策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.