Microwave surface resistance in MgB2: Effect of Te and cubic-BN addition on flux flow and pinning

IF 5.6 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Andrea Alimenti , Enrico Silva , Kostiantyn Torokhtii , Pablo Vidal García , Petre Badica , Adrian Crisan , Mihai Alexandru Grigoroscuta , Nicola Pompeo
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引用次数: 0

Abstract

MgB2 is a perspective superconductor for many power applications. How this potential refers also to microwave or radiofrequency applications is still to be determined. Although its ultimate surface resistance in zero field is not competitive with conventional metallic superconductors, its strong pinning properties can favor RF applications in a dc magnetic field. Nonetheless, the RF response in the vortex state has been relatively less studied, as well as the effect of artificial pinning centers on the microwave surface resistance in the mixed state. In this paper we study the surface resistance of spark-plasma-sintered MgB2, with and without Te and cubic-BN (cBN) addition, in a dc magnetic field up to 1.2 T. We summarize previous results on pure MgB2, and we present new data on Te- and cBN- added MgB2. We use a two-tone dielectric-loaded resonator to measure the field-dependent surface resistance at 16.5 and 26.7 GHz in the temperature range from 10 K to Tc. By exploiting the simultaneous measurements at two frequencies, we extract the flux-flow resistivity, the pinning constant kp and the depinning frequency fp. The two-band nature of MgB2 affects the field dependence of the flux-flow resistivity. The microscopic superconducting state is not affected by the addition of artificial pinning centers, indicating that Te and cBN do not affect interband or intraband scattering. Pinning shows a measurable trend towards an increase in the Te- and cBN- added samples at higher temperatures and fields. We finally compare the results to those obtained in bulk Nb3Sn, also in view of possible in-field RF applications such as microwave cavity-based haloscopes.
MgB2的微波表面电阻:Te和立方bn对磁通流动和钉钉的影响
MgB2是一种有前景的超导体,可用于许多电力应用。这种潜力如何也适用于微波或射频应用仍有待确定。虽然它在零场中的极限表面电阻无法与传统的金属超导体竞争,但其强大的钉住特性有利于射频在直流磁场中的应用。然而,涡旋状态下的射频响应以及人工钉钉中心对混合状态下微波表面电阻的影响研究相对较少。本文研究了在高达1.2 t的直流磁场下,添加Te和cBN(立方bn)和不添加Te和cBN(立方bn)的火花等离子体烧结MgB2的表面电阻。我们总结了以往纯MgB2的结果,并提出了添加Te和cBN的MgB2的新数据。我们使用双音介质负载谐振器测量了16.5和26.7 GHz的场相关表面电阻,温度范围从10 K到Tc。通过在两个频率同时测量,我们提取了磁通流电阻率、钉钉常数kp和钉钉频率fp。MgB2的双波段特性影响了磁流电阻率的场依赖性。微观超导状态不受人工钉钉中心的影响,表明Te和cBN不影响带间和带内散射。在较高的温度和场强下,添加Te和cBN的样品的钉钉有明显的增加趋势。最后,我们将结果与本体Nb3Sn的结果进行了比较,也考虑到可能的场内射频应用,如微波腔型光镜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
3.90
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