A novel approach for determining the peak-to-valley current ratio in nanomaterial devices

IF 4.4 2区物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Results in Physics Pub Date : 2025-05-22 DOI:10.1016/j.rinp.2025.108306

A.M. Elabsy

引用次数: 0

Abstract

The peak-to-valley current ratio (PVCR) was determined using a new method based on the transfer matrix technique. This method was applied to right-triangular (sawtooth) and rectangular nanomaterial double barrier diodes composed of GaAs-Ga_1-yAl_yAs semiconductor materials. It was observed that the well width, barrier thickness, and aluminum content of the barrier material, along with the applied bias voltage and temperature, significantly influenced the PVCR values. It was also found that the resonant tunneling nanostructured devices have pronounced PVCR values at low temperatures and nearly thick barriers. The results of the PVCR are in good agreement with the published experimental and theoretical data. This method can be applied to estimate the required parameters for high-performance resonant nanostructure devices.

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一种测定纳米材料器件中峰谷电流比的新方法

提出了一种基于转移矩阵技术的峰谷电流比测定方法。将该方法应用于由GaAs-Ga1-yAlyAs半导体材料组成的直角三角形（锯齿形）和矩形纳米双势垒二极管。结果表明，井宽、势垒厚度、势垒材料铝含量以及施加的偏置电压和温度对PVCR值有显著影响。研究还发现，谐振隧道纳米结构器件在低温下具有明显的PVCR值，且势垒接近厚。PVCR的计算结果与已发表的实验和理论数据吻合良好。该方法可用于估计高性能谐振纳米结构器件所需的参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Results in Physics MATERIALS SCIENCE, MULTIDISCIPLINARYPHYSIC-PHYSICS, MULTIDISCIPLINARY

CiteScore

8.70

自引率

9.40%

发文量

754

审稿时长

50 days

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