Quantum transport through a constriction in nanosheet gate-all-around transistors.

Kyoung Yeon Kim, Hong-Hyun Park, Seonghoon Jin, Uihui Kwon, Woosung Choi, Dae Sin Kim
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Abstract

In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for quantum mechanical effects arising from the complex device geometries. Here, based on large-scale quantum transport simulations, we demonstrate that quantum geometrical effects in stacked nanosheet GAAFETs significantly impact carrier injection characteristics. Discontinuities in confinement energy at the constriction-the junction between the bulk source/drain and nanosheet channel-cause substantial carrier backscattering. This degradation becomes more severe as electrons experience higher effective energy barriers, and is further exacerbated at lower scattering rate, lower doping concentrations, and near Schottky barriers where electron depletion regions form. Considering these quantum mechanical bottlenecks, proper device optimization for future technology nodes requires a full quantum-based device structure design at the large-scale level, which enables unique optimization strategies beyond conventional classical prediction.

纳米片栅全能晶体管中的量子输运。
在纳米级晶体管中,隧道效应和量子化等量子力学效应显著影响器件特性。然而,大规模量子输运模拟仍然是一个具有挑战性的领域,这使得很难解释由复杂器件几何形状引起的量子力学效应。在此,基于大规模量子输运模拟,我们证明了堆叠纳米片gaafet中的量子几何效应显著影响载流子注入特性。约束能量在收缩处(体源/漏极和纳米片通道之间的连接处)的不连续导致大量载流子后向散射。当电子经历更高的有效能垒时,这种退化变得更加严重,并且在较低的散射率、较低的掺杂浓度和电子耗尽区形成的肖特基势垒附近进一步加剧。考虑到这些量子力学瓶颈,未来技术节点的器件优化需要大规模的全量子器件结构设计,从而实现超越传统经典预测的独特优化策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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