Quaternary PMMA-PEG/SnO₂-SiC Nanocomposite Films for Flexible Nanodielectric and Energy Storage Applications

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2025-03-28 DOI:10.1007/s12633-025-03300-z

Zina Sattar, Ahmed Hashim

{"title":"Quaternary PMMA-PEG/SnO₂-SiC Nanocomposite Films for Flexible Nanodielectric and Energy Storage Applications","authors":"Zina Sattar, Ahmed Hashim","doi":"10.1007/s12633-025-03300-z","DOIUrl":null,"url":null,"abstract":"<div>The current work aims to enhance the microstructure and dielectric characteristics of SnO2-SiC NPs doped blended PMMA-PEG to apply in various flexible nanoelectronics and energy storage applications. The microstructure and dielectric characteristics of PMMA-PEG/SnO2-SiC films were studied. The investigation of microstructure properties for PMMA-PEG/SnO2-SiC films revealed a significant presence of SnO2-SiC NPs inside PMMA/PEG as well as good integration between SnO2-SiC NPs and PMMA-PEG matrix. The dielectric properties results indicated to the increment in dielectric parameters of blended PMMA-PEG as the content of SnO2-SiC NPs rise. The increment ratios of dielectric constant and conductivity of PMMA-PEG are 73% and 38%, respectively, with low values of dielectric loss ranging from 0.38 to 0.74 at 100 Hz. These findings indicated that PMMA-PEG/SnO2-SiC films could be useful in many nanoelectronics applications. The dielectric properties of PMMA-PEG/SnO2-SiC films altered as the frequency is rise. Because of their few cost, great capacity of energy storage, and low loss of energy, the PMMA-PEG/SnO2-SiC films have good dielectric properties to be employed in a wide range of flexible nanoelectronics applications. The pressure sensor results showed the PMMA/PEG/SnO2/SiC films included high sensitivity at pressure sensor ranging of 80 bar to 160 bar. By comparison of PMMA-PEG/SnO2-SiC films with other sensors, the fabricated films demonstrated great pressure sensitivity, excellent flexibility, and strong environmental durability.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1681 - 1692"},"PeriodicalIF":2.8000,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03300-z","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

Abstract

The current work aims to enhance the microstructure and dielectric characteristics of SnO₂-SiC NPs doped blended PMMA-PEG to apply in various flexible nanoelectronics and energy storage applications. The microstructure and dielectric characteristics of PMMA-PEG/SnO₂-SiC films were studied. The investigation of microstructure properties for PMMA-PEG/SnO₂-SiC films revealed a significant presence of SnO₂-SiC NPs inside PMMA/PEG as well as good integration between SnO₂-SiC NPs and PMMA-PEG matrix. The dielectric properties results indicated to the increment in dielectric parameters of blended PMMA-PEG as the content of SnO₂-SiC NPs rise. The increment ratios of dielectric constant and conductivity of PMMA-PEG are 73% and 38%, respectively, with low values of dielectric loss ranging from 0.38 to 0.74 at 100 Hz. These findings indicated that PMMA-PEG/SnO₂-SiC films could be useful in many nanoelectronics applications. The dielectric properties of PMMA-PEG/SnO₂-SiC films altered as the frequency is rise. Because of their few cost, great capacity of energy storage, and low loss of energy, the PMMA-PEG/SnO₂-SiC films have good dielectric properties to be employed in a wide range of flexible nanoelectronics applications. The pressure sensor results showed the PMMA/PEG/SnO₂/SiC films included high sensitivity at pressure sensor ranging of 80 bar to 160 bar. By comparison of PMMA-PEG/SnO₂-SiC films with other sensors, the fabricated films demonstrated great pressure sensitivity, excellent flexibility, and strong environmental durability.

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第四季PMMA-PEG/SnO₂-SiC纳米复合薄膜的柔性纳米介电和储能应用

目前的工作旨在提高SnO2-SiC NPs掺杂混合PMMA-PEG的微观结构和介电特性，以应用于各种柔性纳米电子学和储能应用。研究了PMMA-PEG/SnO2-SiC薄膜的微观结构和介电特性。对PMMA-PEG/SnO2-SiC薄膜的微观结构性能进行了研究，发现PMMA/PEG内部存在大量的SnO2-SiC NPs，并且SnO2-SiC NPs与PMMA-PEG基体之间具有良好的集成。电介质性能结果表明，混合PMMA-PEG的介电参数随着SnO2-SiC NPs含量的增加而增加。PMMA-PEG的介电常数和电导率分别增加73%和38%，在100 Hz时介电损耗的低值在0.38 ~ 0.74之间。这些发现表明，PMMA-PEG/SnO2-SiC薄膜可用于许多纳米电子学应用。PMMA-PEG/SnO2-SiC薄膜的介电性能随频率的升高而改变。PMMA-PEG/SnO2-SiC薄膜具有成本低、储能容量大、能量损耗低等优点，具有良好的介电性能，可广泛应用于柔性纳米电子学领域。压力传感器结果表明，PMMA/PEG/SnO2/SiC薄膜在80 ~ 160 bar的压力传感器范围内具有较高的灵敏度。通过将PMMA-PEG/SnO2-SiC薄膜与其他传感器进行比较，制备的薄膜具有良好的压力敏感性、优异的柔韧性和较强的环境耐久性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.