Synthesis and Gamma Irradiation Response of Chalcogenide Perovskite ZnSnS3 Thin Films

Abstract

Stable and Lead-free perovskites have grown to be considered encouraging materials for advanced applications due to their promising properties. In this investigation, we presented the synthesis and characterization of chalcogenides perovskite (ZnSnS₃) for the gamma sensing application. The ZnSnS₃ thin films that have been deposited following a two-step spin coating protocol have not yet been investigated. The trigonal phase of the polycrystalline nanostructure of the ZnSnS₃ has been confirmed using X-ray diffraction (XRD). The optical band gap (2.46 eV) of the prepared film has been computed by reflectance spectroscopy, and wide photoluminescence (PL). The electrical properties were studied using a dark current–voltage (I–V) characteristic. In the forward bias, current values rise with increasing radiation dosage, though the turn-on potential goes down from 4.76 V to 4.11 V. The ideality factor of the ZnSnS₃/p-Si-hetero-structure was larger than one. However, the saturation current, series resistance, and barrier height for the prepared hetero-structure alter with gamma radiation dose values due to the variation in the density of defect and charge carrier trapping at the interfacial layer. The overall radiation response of the ZnSnS₃/p-Si hetero-structure system has been observed by gamma rays-induced carriers inside the depletion region at the interfaces. The responsivity of the thin films suggested that the prepared hetero-structure can be a potential candidate for radiation sensors and dosimeters.