Ashiq Ramzan, Mudasir Younis Sofi, Mohd Shahid Khan, Javid Ali, M. Ajmal Khan
{"title":"First-principles investigation of Mg-based MgAl2X4 (X = S, Se) spinels for optoelectronic and energy harvesting applications","authors":"Ashiq Ramzan, Mudasir Younis Sofi, Mohd Shahid Khan, Javid Ali, M. Ajmal Khan","doi":"10.1140/epjb/s10051-025-00937-y","DOIUrl":null,"url":null,"abstract":"<div><p>Magnesium-based chalcogenides have emerged as promising candidates for optoelectronic and energy harvesting devices. In this study, we investigate the structural, electronic, optical, elastic, and thermoelectric properties of MgAl<sub>2</sub>X<sub>4</sub> (X = S, Se) using density functional theory (DFT). Structural optimization confirms thermodynamic stability with negative formation energies of − 0.994 eV (MgAl<sub>2</sub>S<sub>4</sub>) and − 1.359 eV (MgAl<sub>2</sub>Se<sub>4</sub>). The modified Becke-Johnson (mBJ) potential reveals direct band gaps of 2.8 eV for MgAl<sub>2</sub>S<sub>4</sub> and 1.9 eV for MgAl<sub>2</sub>Se<sub>4</sub>, suitable for optoelectronic applications. Optical analysis shows strong absorption in the visible–UV range, with absorption coefficients of <span>\\(\\sim\\)</span> 50 × 10<sup>4</sup> cm⁻<sup>1</sup> for MgAl<sub>2</sub>S<sub>4</sub> and <span>\\(\\sim\\)</span> 60 × 10<sup>4</sup> cm⁻<sup>1</sup> for MgAl<sub>2</sub>Se<sub>4</sub>. Elastic constants confirm mechanical stability and ductile behavior, while thermoelectric analysis reveals high Seebeck coefficients and figure of merit (zT) values of 0.96 and 0.95 for MgAl<sub>2</sub>S<sub>4</sub> and MgAl<sub>2</sub>Se<sub>4</sub>, respectively. The combination of favorable electronic, optical, and thermoelectric properties underscores the potential of MgAl<sub>2</sub>X<sub>4</sub> chalcogenides for advanced applications in photovoltaics and thermoelectric devices.</p><h3>Graphical abstract</h3><p>Figure (a) shows the absorption coefficient, while Figure (b) presents the figure of merit at 300 K, highlighting the suitability of the materials for optoelectronic and thermoelectric applications. </p>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 5","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The European Physical Journal B","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1140/epjb/s10051-025-00937-y","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Magnesium-based chalcogenides have emerged as promising candidates for optoelectronic and energy harvesting devices. In this study, we investigate the structural, electronic, optical, elastic, and thermoelectric properties of MgAl2X4 (X = S, Se) using density functional theory (DFT). Structural optimization confirms thermodynamic stability with negative formation energies of − 0.994 eV (MgAl2S4) and − 1.359 eV (MgAl2Se4). The modified Becke-Johnson (mBJ) potential reveals direct band gaps of 2.8 eV for MgAl2S4 and 1.9 eV for MgAl2Se4, suitable for optoelectronic applications. Optical analysis shows strong absorption in the visible–UV range, with absorption coefficients of \(\sim\) 50 × 104 cm⁻1 for MgAl2S4 and \(\sim\) 60 × 104 cm⁻1 for MgAl2Se4. Elastic constants confirm mechanical stability and ductile behavior, while thermoelectric analysis reveals high Seebeck coefficients and figure of merit (zT) values of 0.96 and 0.95 for MgAl2S4 and MgAl2Se4, respectively. The combination of favorable electronic, optical, and thermoelectric properties underscores the potential of MgAl2X4 chalcogenides for advanced applications in photovoltaics and thermoelectric devices.
Graphical abstract
Figure (a) shows the absorption coefficient, while Figure (b) presents the figure of merit at 300 K, highlighting the suitability of the materials for optoelectronic and thermoelectric applications.