P-Metal Geometry Impacts Micro-LEDs Efficiency: Current Spreading and Light Extraction

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shi-Biao Liu;Mai-Jia Lin;Tao-Ming Liu;Wen-An Guo;Hua-Xin Xiong;Yue Lin;Yu-Han Su;Hao-Chung Kuo;Yi-Jun Lu;Ting-Zhu Wu;Zhong Chen
{"title":"P-Metal Geometry Impacts Micro-LEDs Efficiency: Current Spreading and Light Extraction","authors":"Shi-Biao Liu;Mai-Jia Lin;Tao-Ming Liu;Wen-An Guo;Hua-Xin Xiong;Yue Lin;Yu-Han Su;Hao-Chung Kuo;Yi-Jun Lu;Ting-Zhu Wu;Zhong Chen","doi":"10.1109/LPT.2025.3568789","DOIUrl":null,"url":null,"abstract":"P-metal geometry has a significant impact on chip current spreading, which, in turn, affects the optoelectronic characteristics of the devices. We designed and fabricated a series of <inline-formula> <tex-math>$37~\\mu $ </tex-math></inline-formula>m square mesa of micro-LED green chips with different P-metal geometries (ring-shaped, disk-shaped, and cross shaped), and subsequently investigated their optoelectronic characteristics. The results demonstrate that the optimal optoelectronic characteristics are achieved when the P-metal is cross-shaped, with an external quantum efficiency of up to 18.85%. This represents improvements of 12.20% and 3.52% compared to devices with ring-shaped and disk-shaped P-metals, respectively. The analysis suggests that this is because the cross-shaped P-metal structure is better suited to the square mesa and results in a more uniform spreading of the chip current. COMSOL and TracePro simulations were used to analyze the current spreading and light output of chips with different P-metal geometries and verify our hypothesis. This study is expected to be significant in the design and fabrication of micro-LED chips.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 15","pages":"837-840"},"PeriodicalIF":2.3000,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11000321/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

P-metal geometry has a significant impact on chip current spreading, which, in turn, affects the optoelectronic characteristics of the devices. We designed and fabricated a series of $37~\mu $ m square mesa of micro-LED green chips with different P-metal geometries (ring-shaped, disk-shaped, and cross shaped), and subsequently investigated their optoelectronic characteristics. The results demonstrate that the optimal optoelectronic characteristics are achieved when the P-metal is cross-shaped, with an external quantum efficiency of up to 18.85%. This represents improvements of 12.20% and 3.52% compared to devices with ring-shaped and disk-shaped P-metals, respectively. The analysis suggests that this is because the cross-shaped P-metal structure is better suited to the square mesa and results in a more uniform spreading of the chip current. COMSOL and TracePro simulations were used to analyze the current spreading and light output of chips with different P-metal geometries and verify our hypothesis. This study is expected to be significant in the design and fabrication of micro-LED chips.
p金属几何形状对微型led效率的影响:电流扩散和光提取
p金属几何形状对芯片电流扩展有显著影响,进而影响器件的光电特性。我们设计并制造了一系列价值37~\mu $ m平方的微型led绿色芯片,它们具有不同的p金属几何形状(环形、圆盘形和十字形),并随后研究了它们的光电特性。结果表明,当p金属呈十字形时,其光电特性达到最佳,外量子效率高达18.85%。与环形p金属和圆盘p金属相比,这分别提高了12.20%和3.52%。分析表明,这是因为十字形p金属结构更适合方形台面,导致芯片电流更均匀地扩散。利用COMSOL和TracePro模拟分析了不同p金属几何形状芯片的电流扩散和光输出,并验证了我们的假设。该研究在微型led芯片的设计和制造方面具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters 工程技术-工程:电子与电气
CiteScore
5.00
自引率
3.80%
发文量
404
审稿时长
2.0 months
期刊介绍: IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信