Phase-Change Memory for In-Memory Computing

IF 51.4 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Ghazi Sarwat Syed, Manuel Le Gallo, Abu Sebastian
{"title":"Phase-Change Memory for In-Memory Computing","authors":"Ghazi Sarwat Syed, Manuel Le Gallo, Abu Sebastian","doi":"10.1021/acs.chemrev.4c00670","DOIUrl":null,"url":null,"abstract":"In-memory computing (IMC) is an emerging computational approach that addresses the processor-memory divide in modern computing systems. The core concept is to leverage the physics of memory devices and their array-level organization to perform computations directly within the memory array. Phase-change memory (PCM) is a leading memory technology being explored for IMC. In this perspective, we review the current state of phase-change materials, PCM device physics, and the design and fabrication of PCM-based IMC chips. We also provide an overview of the application landscape and offer insights into future developments.","PeriodicalId":32,"journal":{"name":"Chemical Reviews","volume":"130 1","pages":""},"PeriodicalIF":51.4000,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Reviews","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1021/acs.chemrev.4c00670","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

In-memory computing (IMC) is an emerging computational approach that addresses the processor-memory divide in modern computing systems. The core concept is to leverage the physics of memory devices and their array-level organization to perform computations directly within the memory array. Phase-change memory (PCM) is a leading memory technology being explored for IMC. In this perspective, we review the current state of phase-change materials, PCM device physics, and the design and fabrication of PCM-based IMC chips. We also provide an overview of the application landscape and offer insights into future developments.

Abstract Image

用于内存计算的相变存储器
内存计算(IMC)是一种新兴的计算方法,它解决了现代计算系统中处理器和内存的分歧。其核心概念是利用内存设备的物理特性及其数组级组织来直接在内存数组内执行计算。相变存储器(PCM)是目前IMC领域正在探索的一种领先的存储技术。从这个角度来看,我们回顾了相变材料的现状,PCM器件物理,以及基于PCM的IMC芯片的设计和制造。我们还提供了应用前景的概述,并提供了对未来发展的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chemical Reviews
Chemical Reviews 化学-化学综合
CiteScore
106.00
自引率
1.10%
发文量
278
审稿时长
4.3 months
期刊介绍: Chemical Reviews is a highly regarded and highest-ranked journal covering the general topic of chemistry. Its mission is to provide comprehensive, authoritative, critical, and readable reviews of important recent research in organic, inorganic, physical, analytical, theoretical, and biological chemistry. Since 1985, Chemical Reviews has also published periodic thematic issues that focus on a single theme or direction of emerging research.
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