Electron bridging enhanced peroxydisulfate activation and 4-chlorophenol degradation enabled by doping carbon into graphitic carbon nitride

IF 5.9 3区 工程技术 Q1 CHEMISTRY, MULTIDISCIPLINARY
Xinliang Liu , Kuan Cai , Ziyi Zhong , Jiulong Sha , Xingxiang Ji , Parikshit Gogoi , Hainong Song , Shuangfei Wang , Jinge Guo
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引用次数: 0

Abstract

The peroxydisulfate (PDS)-based advanced oxidation process (AOP) has attracted great attention as an effective technique for oxidatively decomposing organic pollutants. g-C3N4, an excellent photocatalyst, has been studied to activate PDS, but the rapid photogenerated electron-hole recombination severely impedes its photocatalytic performance. Herein, highly efficient point-defect engineering by doping atoms as well as vacancies was adopted to modulate photoinduced exciton dissociation kinetics. We successfully synthesized C-doped carbon nitride (xC-g-C3N4) by a one-step copyrolysis method using glucose and melamine as raw materials. C-doped carbon nitride can act as an electron bridge for electron transfer, leading to xC-g-C3N4 with a wider light absorption range (from 475 nm to 527 nm), narrower band gap (from 2.76 eV to 2.66 eV) and higher charge separation efficiency (from 3.79 μA/cm2 to 3.22 μA/cm2). The enhanced visible light absorption performance and the reduced electron-hole pair recombination rate of xC-g-C3N4 can efficiently initiate PDS. The obtained xC-g-C3N4 catalyst exhibited superior photocatalytic activation performance of PDS for 4-CP degradation under visible light illumination. The degradation rate of 4-CP reached 88.3 %, with a total organic carbon (TOC) removal rate of approximately 87.9 %, which increased by 67.9 % and 160 %, respectively. This study highlights a new effective method of carbon doping in g-C3N4 for activating PDS in the degradation of 4-CP.
碳掺杂石墨化氮化碳后,电子桥接增强过硫酸氢盐活化和4-氯苯酚降解
过硫酸氢盐(PDS)为基础的深度氧化法(AOP)作为一种有效的氧化分解有机污染物的技术受到了广泛的关注。g-C3N4是一种优良的光催化剂,被研究用于激活PDS,但其快速的光生电子-空穴复合严重阻碍了其光催化性能。本文采用掺杂原子和空位的高效点缺陷工程来调节光致激子解离动力学。以葡萄糖和三聚氰胺为原料,采用一步共解法成功合成了c掺杂氮化碳(xC-g-C3N4)。掺c氮化碳可以作为电子转移的电子桥,使得xC-g-C3N4具有更宽的光吸收范围(从475 nm到527 nm)、更窄的带隙(从2.76 eV到2.66 eV)和更高的电荷分离效率(从3.79 μA/cm2到3.22 μA/cm2)。xC-g-C3N4增强的可见光吸收性能和降低的电子-空穴对复合速率可以有效地引发PDS。所制得的xC-g-C3N4催化剂在可见光照射下具有优异的PDS光催化活性,可降解4-CP。4-CP的降解率达到88.3%,总有机碳(TOC)去除率约为87.9%,分别提高了67.9%和160%。本研究强调了在g-C3N4中掺杂碳激活PDS降解4-CP的一种新的有效方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
10.40
自引率
6.60%
发文量
639
审稿时长
29 days
期刊介绍: Journal of Industrial and Engineering Chemistry is published monthly in English by the Korean Society of Industrial and Engineering Chemistry. JIEC brings together multidisciplinary interests in one journal and is to disseminate information on all aspects of research and development in industrial and engineering chemistry. Contributions in the form of research articles, short communications, notes and reviews are considered for publication. The editors welcome original contributions that have not been and are not to be published elsewhere. Instruction to authors and a manuscript submissions form are printed at the end of each issue. Bulk reprints of individual articles can be ordered. This publication is partially supported by Korea Research Foundation and the Korean Federation of Science and Technology Societies.
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