N. F. Zikrillaev, S. V. Koveshnikov, Levent Trabzon, G. Kh. Mavlonov, B. K. Ismaylov, T. B. Ismailov, F. E. Urakova
{"title":"Ferromagnetic Properties of Silicon Doped Manganese Atoms","authors":"N. F. Zikrillaev, S. V. Koveshnikov, Levent Trabzon, G. Kh. Mavlonov, B. K. Ismaylov, T. B. Ismailov, F. E. Urakova","doi":"10.3103/S1068375524700571","DOIUrl":null,"url":null,"abstract":"<p>The study of the ferromagnetic properties of silicon diffusion-doped with manganese impurity atoms makes it possible to determine the magnetic properties of this material. Depending on the technology of obtaining such samples, manganese may be located predominantly in the nodes or interstices of the silicon crystal lattice. It has been established that observations of the ferromagnetic properties of silicon are mainly related to the concentration of holes and the exchange interaction of holes in silicon. The study showed that the <i>d</i>-shell of manganese atoms can be filled with electrons, which leads to the appearance of the magnetic property of silicon doped with manganese atoms. The obtained research results showed a possibility to obtain a magnetic material with ferro-magnetic properties based on silicon doped with manganese impurity atoms, which can be widely used in the creation of spintronic devices in magnetoelectronics.</p>","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"61 1","pages":"75 - 80"},"PeriodicalIF":0.9000,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Engineering and Applied Electrochemistry","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.3103/S1068375524700571","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
The study of the ferromagnetic properties of silicon diffusion-doped with manganese impurity atoms makes it possible to determine the magnetic properties of this material. Depending on the technology of obtaining such samples, manganese may be located predominantly in the nodes or interstices of the silicon crystal lattice. It has been established that observations of the ferromagnetic properties of silicon are mainly related to the concentration of holes and the exchange interaction of holes in silicon. The study showed that the d-shell of manganese atoms can be filled with electrons, which leads to the appearance of the magnetic property of silicon doped with manganese atoms. The obtained research results showed a possibility to obtain a magnetic material with ferro-magnetic properties based on silicon doped with manganese impurity atoms, which can be widely used in the creation of spintronic devices in magnetoelectronics.
期刊介绍：
Surface Engineering and Applied Electrochemistry is a journal that publishes original and review articles on theory and applications of electroerosion and electrochemical methods for the treatment of materials; physical and chemical methods for the preparation of macro-, micro-, and nanomaterials and their properties; electrical processes in engineering, chemistry, and methods for the processing of biological products and food; and application electromagnetic fields in biological systems.
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