Cheng Fang , Ziyi Zhang , Jian Wang , Zhanwen Ye , Kaiyuan Li , Luoqi Wu , Xiaobin Feng , Bo Duan , Lijie Dong , Ling Zhou , Zhonghui Shen
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引用次数: 0
Abstract
The harsh application environment poses higher requirements for the operating temperature of dielectric energy storage capacitors. Suppressing carrier transport at high temperatures is a key method to increase the breakdown field strength (Eb) and the operating temperature of dielectrics. In this paper, low-concentration P-type semiconductor nickel oxide quantum dots (NiOx QDs) were surface modified with polydopamine (PDA) and introduced into the polymer matrix, with the aim to capture hot carriers by constructing hole traps, thereby increasing the high-temperature Eb and energy storage density (Udis) of the polymer. The results confirmed the efficiency of the strategy. At 90 °C, the Eb of the NiOx@PDA/P(VDF-HFP) film reached 2242.78 kV/cm, and the Udis reached 2.94 J/cm3, which were 42.41 % and 164.86 % higher than those of the pure P(VDF-HFP) film. Thermal and mechanical analyses indicated that the enhanced Eb and Udis were mainly attributed to the restriction of the Poole-Frenkel emission within the dielectrics. Together with the enhanced compatibility of the organic-inorganic composite interface, the macro defects of the composites were further suppressed and electrical properties were further increased. This work offers a straightforward and efficient approach for manufacturing high-temperature energy storage dielectrics.
期刊介绍:
Composites Science and Technology publishes refereed original articles on the fundamental and applied science of engineering composites. The focus of this journal is on polymeric matrix composites with reinforcements/fillers ranging from nano- to macro-scale. CSTE encourages manuscripts reporting unique, innovative contributions to the physics, chemistry, materials science and applied mechanics aspects of advanced composites.
Besides traditional fiber reinforced composites, novel composites with significant potential for engineering applications are encouraged.