Yu Feng, Yahui Li, Xixiang Xu, Zeyuan Bu, Jixiang Yin, Dong Yang, Jiachen Liu, Lihao Qin, Keqiang Li, Fei Wang, Yi Zhou, Lang Zhou, Yutao Chang, Jia Li, Dong-Yun Chen, Qiang Li
{"title":"Significant Spin-Capacitive Modulation of Magnetism Through Na+ Motion in Layered FeSe","authors":"Yu Feng, Yahui Li, Xixiang Xu, Zeyuan Bu, Jixiang Yin, Dong Yang, Jiachen Liu, Lihao Qin, Keqiang Li, Fei Wang, Yi Zhou, Lang Zhou, Yutao Chang, Jia Li, Dong-Yun Chen, Qiang Li","doi":"10.1002/adfm.202500234","DOIUrl":null,"url":null,"abstract":"Recently, a novel spin-capacitive method has emerged and distinguishes itself in voltage control of magnetism (VCM) through dual-phase ion-electron conduction, exhibiting significant, rapid, and reversible magnetic modulation in several lithium-ion-based devices, with promising potential for low-power applications. Considering the inherent link to neuronal processing, enhanced safety, and superior compatibility with semiconductor integration of sodium-based devices, the first report on magnetization modulation via Na-assisted spin capacitance mechanism is presented, showcasing unique advantages over lithium-based devices. Employing layered FeSe as the regulated material, operando magnetometry demonstrates giant and reversible magnetic modulation, involving On-Off ferromagnetic switching at high voltages and quasi-linear magnetization change at low voltages. Comprehensive analyses confirm the spin capacitance characteristics of VCM in low-voltage regions, achieving a significant modulation amplitude of 12.70 emu g<sup>−1</sup> within 1 V. This is facilitated by nearly 100% formation of Fe nanoparticles via the two-step reaction during Na introduction to layered FeSe. Furthermore, spin-capacitive magnetic regulation in the devices exhibits superior manipulative characteristics within the low voltage range of 0–0.75 V, notably robust endurance, rapid response, and non-volatility. This work inspires new avenues for developing low-power devices featuring high speed, reversibility, non-volatility, and cost-effectiveness, especially exhibiting notable advantages in brain-like simulation applications.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"19 1","pages":""},"PeriodicalIF":18.5000,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Functional Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/adfm.202500234","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Recently, a novel spin-capacitive method has emerged and distinguishes itself in voltage control of magnetism (VCM) through dual-phase ion-electron conduction, exhibiting significant, rapid, and reversible magnetic modulation in several lithium-ion-based devices, with promising potential for low-power applications. Considering the inherent link to neuronal processing, enhanced safety, and superior compatibility with semiconductor integration of sodium-based devices, the first report on magnetization modulation via Na-assisted spin capacitance mechanism is presented, showcasing unique advantages over lithium-based devices. Employing layered FeSe as the regulated material, operando magnetometry demonstrates giant and reversible magnetic modulation, involving On-Off ferromagnetic switching at high voltages and quasi-linear magnetization change at low voltages. Comprehensive analyses confirm the spin capacitance characteristics of VCM in low-voltage regions, achieving a significant modulation amplitude of 12.70 emu g−1 within 1 V. This is facilitated by nearly 100% formation of Fe nanoparticles via the two-step reaction during Na introduction to layered FeSe. Furthermore, spin-capacitive magnetic regulation in the devices exhibits superior manipulative characteristics within the low voltage range of 0–0.75 V, notably robust endurance, rapid response, and non-volatility. This work inspires new avenues for developing low-power devices featuring high speed, reversibility, non-volatility, and cost-effectiveness, especially exhibiting notable advantages in brain-like simulation applications.
期刊介绍:
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