Tailoring the physical properties of ultrasonically spray pyrolyzed SnS thin films with silver doping

IF 2.3 4区材料科学 Q2 MATERIALS SCIENCE, CERAMICS

Journal of Sol-Gel Science and Technology Pub Date : 2025-03-27 DOI:10.1007/s10971-025-06739-z

Ibrahim Gunes, Emrah Sarica, Vildan Bilgin, Ayse Kucukarslan

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引用次数: 0

Abstract

In this study, the effects of silver (Ag) doping on the structural, morphological, optical, and electrical properties of tin monosulfide (SnS) thin films were investigated. The films, undoped and doped with 3%, 6%, and 9% Ag, were deposited using the ultrasonic spray pyrolysis (USP) technique at a substrate temperature of 350 °C. X-ray diffraction (XRD) analysis confirmed a π-SnS (cubic) structure with (400) preferred orientation for undoped and ≤ 6% Ag-doped films, while 9% doping induced amorphization due to severe lattice distortions. Morphological analyses revealed smooth, void-free surfaces, with average roughness increasing from 5.8 nm (undoped) to 19.6 nm (9% doping). Optical measurements showed that the band gap widened from 1.84 eV (undoped) to 2.47 eV (9% Ag-doped), and Urbach energy increased from 190 meV to 600 meV. Hall effect measurements confirmed p-type conductivity for all films. Resistivity ranged from 4.34 × 10⁵ Ωcm to 9.48 × 10⁵ Ωcm, carrier concentration varied between 2.7 × 10¹² cm^-3 and 5.6 × 10¹² cm^-3, while mobility decreased from 3.3 × 10¹ cm²/Vs to 2.0 × 10¹ cm²/Vs with increasing Ag doping. These findings demonstrate that Ag doping significantly influences the structural and optoelectronic behavior of SnS thin films, making them promising candidates for thin-film solar cells and optoelectronic applications.

Graphical Abstract

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掺杂银修饰超声喷雾热解SnS薄膜的物理性质

本文研究了银（Ag）掺杂对单硫化锡（SnS）薄膜结构、形貌、光学和电学性能的影响。采用超声喷雾热解（USP）技术，在350℃的衬底温度下，制备了未掺杂和掺杂3%、6%和9% Ag的薄膜。x射线衍射（XRD）分析证实，未掺杂和≤6% ag掺杂的薄膜具有（400）优先取向的π-SnS（立方）结构，而9%掺杂导致严重的晶格畸变导致非晶化。形貌分析显示表面光滑，无空洞，平均粗糙度从5.8 nm（未掺杂）增加到19.6 nm（掺杂9%）。光学测量表明，带隙从1.84 eV（未掺杂）扩大到2.47 eV（掺银9%），乌尔巴赫能量从190 meV增加到600 meV。霍尔效应测量证实了所有薄膜的p型电导率。电阻率变化范围为4.34 × 105 Ωcm ~ 9.48 × 105 Ωcm，载流子浓度变化范围为2.7 × 1012 cm-3 ~ 5.6 × 1012 cm-3，迁移率随Ag掺杂量的增加从3.3 × 101 cm2/Vs下降到2.0 × 101 cm2/Vs。这些发现表明，Ag掺杂显著影响了SnS薄膜的结构和光电子行为，使其成为薄膜太阳能电池和光电子应用的有希望的候选者。图形抽象

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来源期刊

Journal of Sol-Gel Science and Technology 工程技术-材料科学：硅酸盐

CiteScore

4.70

自引率

4.00%

发文量

280

审稿时长

2.1 months

期刊介绍： The primary objective of the Journal of Sol-Gel Science and Technology (JSST), the official journal of the International Sol-Gel Society, is to provide an international forum for the dissemination of scientific, technological, and general knowledge about materials processed by chemical nanotechnologies known as the "sol-gel" process. The materials of interest include gels, gel-derived glasses, ceramics in form of nano- and micro-powders, bulk, fibres, thin films and coatings as well as more recent materials such as hybrid organic-inorganic materials and composites. Such materials exhibit a wide range of optical, electronic, magnetic, chemical, environmental, and biomedical properties and functionalities. Methods for producing sol-gel-derived materials and the industrial uses of these materials are also of great interest.