Fabrication and characterization of rare earth-free nanophosphor based devices for solid-state lighting applications†

IF 5.2 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
M. Rakshita, Aachal A. Sharma, Payal P. Pradhan, K. A. K. Durga Prasad, M. Srinivas and D. Haranath
{"title":"Fabrication and characterization of rare earth-free nanophosphor based devices for solid-state lighting applications†","authors":"M. Rakshita, Aachal A. Sharma, Payal P. Pradhan, K. A. K. Durga Prasad, M. Srinivas and D. Haranath","doi":"10.1039/D5MA00117J","DOIUrl":null,"url":null,"abstract":"<p >This study presents a novel, rare-earth-free Zn<small><sub>3</sub></small>V<small><sub>2</sub></small>O<small><sub>8</sub></small> nanophosphor (ZnVO NP) with exceptional luminescent properties, making it ideal for phosphor-converted white light-emitting diodes (pc-WLEDs). When coupled with a 385 nm LED chip, ZnVO NP delivers white light with a correlated color temperature of approximately 4920 K, a high quantum yield of 74%, and an excellent color rendering index (CRI) of <em>R</em><small><sub>a</sub></small> = 91. Notably, the <em>R</em><small><sub>9</sub></small> value of 90.5 surpasses that of commercially available Y<small><sub>3</sub></small>Al<small><sub>5</sub></small>O<small><sub>12</sub></small>:Ce<small><sup>3+</sup></small> (<em>R</em><small><sub>9</sub></small> = 14.3), highlighting superior red color rendering. The white light, excited at 385 nm, has CIE coordinates of (0.330, 0.301). Temperature-dependent photoluminescence spectra indicate high thermal stability, with emission peaking in the yellow region at CIE coordinates (0.43, 0.52) under 290 nm, 361 nm, and 385 nm excitation. This broadband yellow-emitting ZnVO NP offers a promising rare-earth-free alternative for pc-WLEDs, providing excellent color quality and stability under diverse operating conditions, demonstrating its practical potential in advanced lighting applications.</p>","PeriodicalId":18242,"journal":{"name":"Materials Advances","volume":" 10","pages":" 3203-3219"},"PeriodicalIF":5.2000,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/ma/d5ma00117j?page=search","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Advances","FirstCategoryId":"1085","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/ma/d5ma00117j","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

This study presents a novel, rare-earth-free Zn3V2O8 nanophosphor (ZnVO NP) with exceptional luminescent properties, making it ideal for phosphor-converted white light-emitting diodes (pc-WLEDs). When coupled with a 385 nm LED chip, ZnVO NP delivers white light with a correlated color temperature of approximately 4920 K, a high quantum yield of 74%, and an excellent color rendering index (CRI) of Ra = 91. Notably, the R9 value of 90.5 surpasses that of commercially available Y3Al5O12:Ce3+ (R9 = 14.3), highlighting superior red color rendering. The white light, excited at 385 nm, has CIE coordinates of (0.330, 0.301). Temperature-dependent photoluminescence spectra indicate high thermal stability, with emission peaking in the yellow region at CIE coordinates (0.43, 0.52) under 290 nm, 361 nm, and 385 nm excitation. This broadband yellow-emitting ZnVO NP offers a promising rare-earth-free alternative for pc-WLEDs, providing excellent color quality and stability under diverse operating conditions, demonstrating its practical potential in advanced lighting applications.

用于固态照明的无稀土纳米荧光粉器件的制造和表征
本研究提出了一种新颖的,不含稀土的Zn3V2O8纳米荧光粉(ZnVO NP),具有优异的发光性能,使其成为磷转换白光发光二极管(pc- wled)的理想材料。当与385 nm LED芯片耦合时,ZnVO NP可提供相关色温约为4920 K的白光,高量子产率为74%,显色指数(CRI)为Ra = 91。值得注意的是,R9值为90.5,超过了市售的Y3Al5O12:Ce3+ (R9 = 14.3),突出了优越的显红色性。在385 nm处激发的白光的CIE坐标为(0.330,0.301)。在290 nm、361 nm和385 nm激发下,光致发光光谱具有较高的热稳定性,发光峰位于CIE坐标(0.43,0.52)处的黄色区域。这种宽带黄色发光ZnVO NP为pc- wled提供了一种有前途的无稀土替代品,在各种操作条件下提供出色的色彩质量和稳定性,展示了其在先进照明应用中的实际潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Advances
Materials Advances MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
7.60
自引率
2.00%
发文量
665
审稿时长
5 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信