SGOI wafers with high structural and electrical quality fabricated through Ge condensation in SiGe/SOI

IF 3.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2025-05-16 DOI:10.1016/j.vacuum.2025.114410

Mansour Aouassa , Arette-Hourqet Adam , Ismail Madaci , Mathieu Abel , Anne-Flore Mallet , Olivier Gourhant , Isabelle Berbezier , A.K. Aladim

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引用次数: 0

Abstract

This work presents the structural and electrical performance of novel SiGe-on-Insulator (SGOI) wafers fabricated using a new thermal condensation process for germanium (Ge) in SiGe, leveraging advanced vacuum technology to ensure precise control and high purity. In this process, a 15 nm thick Si_0.82Ge_0.18 film is first epitaxially grown on an ultrathin 8 nm silicon-on-insulator (SOI) wafer via LPCVD. A subsequent low-temperature thermal oxidation at 750 °C converts the Si_0.82Ge_0.18/SOI film into a high-Ge-content (47 %) SGOI wafer with a defect-free structure and an exceptionally smooth surface. Electrical characterization through current-voltage (I-V), capacitance-voltage (C-V), and impedance measurements demonstrates the exceptional properties of the resulting SGOI wafer, including low leakage current, low interface state density, and high electrical stability. These results showcase the effectiveness of the novel Ge condensation process in producing low-cost, high-performance SGOI wafers for advanced optoelectronic and photonic applications.

查看原文本刊更多论文

在SiGe/SOI中通过Ge缩合制备出具有高结构质量和高电学质量的SGOI晶圆

本文介绍了新型绝缘体上硅锗（SGOI）晶圆的结构和电气性能，该晶圆采用硅锗中的锗（Ge）的新型热冷凝工艺，利用先进的真空技术确保精确控制和高纯度。在该工艺中，首先通过LPCVD在超薄的8nm绝缘体上硅（SOI）晶圆上外延生长了15nm厚的Si0.82Ge0.18薄膜。随后在750℃的低温热氧化将Si0.82Ge0.18/SOI薄膜转化为高锗含量（47%）的SGOI晶圆，具有无缺陷的结构和异常光滑的表面。通过电流-电压（I-V）、电容-电压（C-V）和阻抗测量的电学特性证明了SGOI晶圆的优异性能，包括低漏电流、低界面态密度和高电稳定性。这些结果显示了新型锗凝聚工艺在生产低成本，高性能的SGOI晶圆方面的有效性，用于先进的光电和光子应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.