Multifunctional voltage and temperature controlled metasurface using graphene and vanadium dioxide for terahertz applications

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hiranmay Mistri, Anumoy Ghosh, Abdur Rahaman Sardar, Pabitra Roy
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引用次数: 0

Abstract

This paper presents a metasurface with multiple functionalities designed for terahertz (THz) frequency applications, utilizing graphene and vanadium dioxide (VO2). The proposed metasurface is controllable through the voltage-tuning properties of graphene and the temperature-tuning properties of VO2. The unit cell is comprised of a silicon dioxide (SiO2) substrate and reflective ground made of gold. The top layer is composed of a diagonally connected split hexagon (DCSH) made using the combination of graphene and VO2. In normal room temperature (298 K), i.e., at the insulating state of VO2, the metasurface operates as a linear-to-linear cross polarization converter (LTLPC) for the frequency band 1.61 THz to 1.88 THz, i.e., 15.47% fractional bandwidth (FBW) and a linear-to-circular polarization converter (LTCPC) from 2.46 THz to 3.10 THz, i.e., 23% FBW and a triple band absorber with absorption maxima at 1.51 THz, 2.52 THz, and 3.59 THz having 100%, 99.3%, and 84.3% absorptions, respectively. In higher temperatures (above 351 K), i.e., in the metallic state of VO2, the metasurface operates as an LTLPC for the frequency band 1.60 THz to 3.26 THz, i.e., 68.31% FBW, and a dual-band absorbers at frequency at 1.50 THz and, 3.31 THz with 100% and 99.2% absorptions. The equivalent circuit models of the metasurface are presented for insulating and metallic states. The device's performance exhibits uniformity of response up to 40° incident angle variations for the insulating state as well as for the metallic state of VO2. It offers excellent dynamic switching capability, versatile tunability, and multimodal operations for terahertz applications.

使用石墨烯和二氧化钒用于太赫兹应用的多功能电压和温度控制超表面
本文介绍了一种利用石墨烯和二氧化钒(VO2)为太赫兹(THz)频率应用设计的具有多种功能的超表面。所提出的超表面是通过石墨烯的电压调谐特性和VO2的温度调谐特性来控制的。该单元电池由二氧化硅(SiO2)衬底和由金制成的反射地面组成。顶层由对角线连接的分裂六边形(DCSH)组成,由石墨烯和VO2的组合制成。在正常室温(298 K)下,即在VO2绝缘状态下,超表面在1.61 ~ 1.88 THz频段作为线性-线性交叉极化变换器(LTLPC)工作,即15.47%的分数带宽(FBW);在2.46 ~ 3.10 THz频段作为线性-圆极化变换器(LTCPC)工作,即23%的FBW;在1.51 THz、2.52 THz和3.59 THz频段作为三波段吸收器,最大吸收率分别为100%、99.3%和84.3%。在较高温度下(高于351 K),即在VO2的金属态下,超表面在1.60 THz至3.26 THz频段(即68.31% FBW)作为LTLPC工作,在1.50 THz和3.31 THz频段作为双波段吸收体,吸收率分别为100%和99.2%。建立了超表面的绝缘态和金属态等效电路模型。该器件的性能在高达40°入射角变化的情况下对绝缘状态和VO2的金属状态表现出均匀的响应。它为太赫兹应用提供了出色的动态切换能力、通用可调性和多模态操作。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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