Investigation of nanoscale surface roughness, fractal growth, optical constant and dispersion parameters of rf-sputtered CdS thin films for high-performance metal–semiconductor photodetector
IF 3.3 3区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0
Abstract
The fractal dimension is most significant parameters that provides a way to quantify the irregularities, complexity of surface and such studied that are very important in understanding its impact on performance of optical and designed photodetector device. Herein, we report the deposition of CdS thin films on FTO-coated glass substrates via RF magnetron sputtering. Field emission scanning electron microscopy (FESEM) images were used to calculate particle size. The fractal parameters were computed height-height correlation function (HHCF) algorithms. It was observed that fractal dimension values decreased with increasing deposition time, with samples at lower deposition times exhibiting the most irregular topographical surface (Df = 2.21 ± 0.03). The optical study showed a decrease in the optical band gap from 2.38 to 2.36 eV. Moreover, the Wemple-DiDomenico (WDD) approach was used to extract dispersion energy parameters such as the oscillator energy (E0) and dispersion energy (Ed) of the thin films. The dispersion energies ranged from 11.23 to 15.39 eV, while the oscillator energies of the deposited films ranged from 4.32 to 4.08 eV. In addition, we have explored the detailed photodetector characteristics of the designed detector device through current–voltage (I–V) measurement. Here, it was observed that the photodetector parameters such as, sensitivity, responsivity, and detectivity are influenced with film thickness. The designed photodetector device at 1 V bias exhibits the maximum responsivity of 0.79 mAW−1, and a photo-detectivity of 8.4 × 1010 Jones under 532 nm illumination. The fabricated photodetector showed a good photo response, a fast time response, and high reproducibility with time.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.