{"title":"Reflectance spectral characteristics and imaging mechanism of silicon-based lithography chips based on coaxial broadband illumination","authors":"Donghui Zhang , Tianxi Zhai , Yingjie Yu , Xiangyang Pang","doi":"10.1016/j.optcom.2025.131990","DOIUrl":null,"url":null,"abstract":"<div><div>The optical performance of silicon-based lithography chips is crucial for optimizing optoelectronic devices. However, as lithography processes advance to the nanoscale, traditional single-wavelength light sources face challenges in resolving the complex surface structures of silicon-based lithography chips. To address this issue, this study proposed a tunable broadband spectral illumination microscopy imaging method based on reflection characteristics for chip detection, and explored the effects of different lighting conditions on lithographic imaging quality. Through an in-depth analysis of the interaction between light and silicon-based lithography chips, the study revealed the feedback effects of illumination conditions on surface electric field distribution and imaging performance. Using finite element simulations, a silicon-based chip model was established to simulate surface electric field distribution and reflection spectral characteristics under different wavelength light sources. The results clearly indicated the significant role of short-wavelength light in exciting surface charges and enhancing the local electric field. The study identified the key influence mechanisms of multi-wavelength light sources in optimizing lithographic imaging quality. The findings demonstrated that the green wavelength band at 525 nm exhibited the best performance in exciting surface charges and enhancing the local electric field. The average reflectance reached 38.45 % and 41.37 % on simple and complex surfaces, respectively, while the Strehl ratio was the highest at 0.49 and 0.43, indicating an effective improvement in imaging quality. Additionally, the study confirmed that the primary mechanism for electric field enhancement was the localized surface plasmon resonance effect. This study provides a theoretical basis for developing characterization methods for complex surface structures.</div></div>","PeriodicalId":19586,"journal":{"name":"Optics Communications","volume":"590 ","pages":"Article 131990"},"PeriodicalIF":2.2000,"publicationDate":"2025-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030401825005188","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
The optical performance of silicon-based lithography chips is crucial for optimizing optoelectronic devices. However, as lithography processes advance to the nanoscale, traditional single-wavelength light sources face challenges in resolving the complex surface structures of silicon-based lithography chips. To address this issue, this study proposed a tunable broadband spectral illumination microscopy imaging method based on reflection characteristics for chip detection, and explored the effects of different lighting conditions on lithographic imaging quality. Through an in-depth analysis of the interaction between light and silicon-based lithography chips, the study revealed the feedback effects of illumination conditions on surface electric field distribution and imaging performance. Using finite element simulations, a silicon-based chip model was established to simulate surface electric field distribution and reflection spectral characteristics under different wavelength light sources. The results clearly indicated the significant role of short-wavelength light in exciting surface charges and enhancing the local electric field. The study identified the key influence mechanisms of multi-wavelength light sources in optimizing lithographic imaging quality. The findings demonstrated that the green wavelength band at 525 nm exhibited the best performance in exciting surface charges and enhancing the local electric field. The average reflectance reached 38.45 % and 41.37 % on simple and complex surfaces, respectively, while the Strehl ratio was the highest at 0.49 and 0.43, indicating an effective improvement in imaging quality. Additionally, the study confirmed that the primary mechanism for electric field enhancement was the localized surface plasmon resonance effect. This study provides a theoretical basis for developing characterization methods for complex surface structures.
期刊介绍:
Optics Communications invites original and timely contributions containing new results in various fields of optics and photonics. The journal considers theoretical and experimental research in areas ranging from the fundamental properties of light to technological applications. Topics covered include classical and quantum optics, optical physics and light-matter interactions, lasers, imaging, guided-wave optics and optical information processing. Manuscripts should offer clear evidence of novelty and significance. Papers concentrating on mathematical and computational issues, with limited connection to optics, are not suitable for publication in the Journal. Similarly, small technical advances, or papers concerned only with engineering applications or issues of materials science fall outside the journal scope.