Effect of energy back transfer from Er3+ to Yb3+ ions on the upconversion luminescence of Er:NaYb(MoO4)2 and Yb,Er:NaBi(MoO4)2.

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Miaomiao Wang, Mengyu Zhang, Shoujun Ding, Haitang Hu, Chuancheng Zhang, Yong Zou
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引用次数: 0

Abstract

Under the excitation of a 980 nm laser, the visible upconversion (UC) luminescence of Er3+ ions doped Yb3+ ions self-activated NaYb(MoO4)2 phosphor and crystal, as well as the Yb3+/Er3+ ions codoped NaBi(MoO4)2 crystal were investigated comprehensively. The results indicate that all three samples exhibit two significant green emission bands and a weak red emission band in the visible band corresponding to the transitions of 2H11/2/4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 of Er3+ ions, respectively. Through the variable power density spectra of three different samples, the relationship between the energy back transfer (EBT) process of Yb3+-Er3+ ions and the power density point and Yb3+ ion concentration was investigated. The EBT process was observed in both the Er3+ ions doped Yb3+ ions self-activated NaYb(MoO4)2 phosphor and crystal, as confirmed by the luminescence image of the sample. At high power density, the Yb3+ ions self-activated sample exhibited yellow luminescence, with the crystal appearing later than the phosphor. In contrast, the NaBi(MoO4)2 crystal displayed bright green emission within the measured power density range. In addition, by monitoring the relative intensity change of Yb3+ emission in 5 at% Er3+:NaYb(MoO4)2 crystal, the generation of EBT process in self-activated samples at high power density is more directly explained. These experimental results provide a reliable basis for our comprehensive understanding of the EBT mechanism, and also provide a reliable direction for the final determination of the optimal excitation power density for optical temperature measurement.

Er3+离子向Yb3+离子的能量反转移对Er:NaYb(MoO4)2和Yb,Er:NaBi(MoO4)2上转换发光的影响
在980 nm激光激发下,对Er3+离子掺杂Yb3+离子自激活的NaYb(MoO4)2荧光粉和晶体,以及Yb3+/Er3+离子共掺杂NaBi(MoO4)2晶体的可见光上转换(UC)发光进行了全面研究。结果表明:在Er3+离子的2H11/2/4S3/2→4I15/2和4F9/2→4I15/2跃迁过程中,三种样品在可见光波段均呈现出明显的绿色发射带和微弱的红色发射带。通过三种不同样品的变功率密度谱,研究了Yb3+-Er3+离子的能量反转移过程与功率密度点和Yb3+离子浓度的关系。在Er3+离子掺杂Yb3+离子自激活的NaYb(MoO4)2荧光粉和晶体中均观察到EBT过程,样品的发光图像证实了这一过程。在高功率密度下,Yb3+离子自激活样品呈现黄色发光,晶体出现时间晚于荧光粉。相比之下,NaBi(MoO4)2晶体在测量的功率密度范围内显示出明亮的绿色发射。此外,通过监测5中Yb3+在% Er3+:NaYb(MoO4)2晶体下的发射相对强度变化,更直接地解释了高功率密度下自激活样品中EBT过程的产生。这些实验结果为我们全面了解EBT机理提供了可靠的基础,也为最终确定光学测温的最佳激发功率密度提供了可靠的方向。
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来源期刊
Frontiers of Optoelectronics
Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
7.80
自引率
0.00%
发文量
583
期刊介绍: Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more
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