{"title":"Insights into the effect of gadolinium doping on the structural, magnetic, and optical properties of β-Ga2O3","authors":"Anju Babu, N. Madhusudhana Rao","doi":"10.1007/s10854-025-14891-z","DOIUrl":null,"url":null,"abstract":"<div><p>To examine the effect of gadolinium (Gd) doping on the structural, magnetic, and optical characteristics of β-gallium oxide, Gd-doped β-Ga<sub>2</sub>O<sub>3</sub> powder samples were prepared with Gd concentrations of 0, 1, 3, 5, and 7 M% using a reflux condensation method. Structural analysis via X-ray diffraction (XRD) and Rietveld refinement confirmed the formation of single-phase monoclinic β-Ga<sub>2</sub>O<sub>3</sub> at Gd concentrations of 0, 1, and 3 M%. However, samples doped with 5 and 7 M% Gd exhibited minor phase contributions from cubic Gd<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> alongside β-Ga<sub>2</sub>O<sub>3</sub> as the major phase. Analysis of the surface morphology revealed that both pure and Gd-doped samples retained an ellipsoidal morphology. Energy-dispersive X-ray spectroscopy (EDX) confirmed the purity of the prepared samples, identifying gallium, oxygen, and gadolinium as the sole elements present. Reflectance studies and Tauc plot analysis indicated a reduction in both reflectance and bandgap with increasing Gd doping. Photoluminescence studies in the UV–Vis region showed emission peaks in the UV, blue, and green regions. Magnetic studies conducted at room temperature demonstrated a transition in β-Ga<sub>2</sub>O<sub>3</sub> from a diamagnetic to an antiferromagnetic state upon Gd doping. The modified magnetic properties, combined with the enhanced optical properties achieved through Gd doping, explore the efficacy of Gd-doped β-Ga₂O₃ as a multifunctional material, paving the way for its use in applications as a bifunctional semiconductor material.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14891-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
To examine the effect of gadolinium (Gd) doping on the structural, magnetic, and optical characteristics of β-gallium oxide, Gd-doped β-Ga2O3 powder samples were prepared with Gd concentrations of 0, 1, 3, 5, and 7 M% using a reflux condensation method. Structural analysis via X-ray diffraction (XRD) and Rietveld refinement confirmed the formation of single-phase monoclinic β-Ga2O3 at Gd concentrations of 0, 1, and 3 M%. However, samples doped with 5 and 7 M% Gd exhibited minor phase contributions from cubic Gd3Ga5O12 alongside β-Ga2O3 as the major phase. Analysis of the surface morphology revealed that both pure and Gd-doped samples retained an ellipsoidal morphology. Energy-dispersive X-ray spectroscopy (EDX) confirmed the purity of the prepared samples, identifying gallium, oxygen, and gadolinium as the sole elements present. Reflectance studies and Tauc plot analysis indicated a reduction in both reflectance and bandgap with increasing Gd doping. Photoluminescence studies in the UV–Vis region showed emission peaks in the UV, blue, and green regions. Magnetic studies conducted at room temperature demonstrated a transition in β-Ga2O3 from a diamagnetic to an antiferromagnetic state upon Gd doping. The modified magnetic properties, combined with the enhanced optical properties achieved through Gd doping, explore the efficacy of Gd-doped β-Ga₂O₃ as a multifunctional material, paving the way for its use in applications as a bifunctional semiconductor material.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.