Investigation of the effect of single walled carbon nanotube (SWCNT) on semiconducting properties of turmeric dye based Schottky device: a space charge limited conduction approach

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-16 DOI:10.1007/s10854-025-14866-0

Subhra Rakshit, Arnab Kanti Karan, N. B. Manik

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Abstract

This work studies semiconducting electrical properties of Turmeric dye (TR) based Schottky device and the effect of Single Wall Carbon Nanotube (SWCNT) on it in the temperature range from 303 to 343 K. ITO/TR/Al and ITO/TR + SWCNT/Al configuration were fabricated utilizing the spin coating technique and current–voltage measurements has been performed. SCLC approach has been utilised to estimate device parameters such as conductivity, barrier height, series resistance and rectification ratio. Considering exponential trap distributions, significant parameters like trap concentration, characteristic temperature, trap centre density were estimated from temperature-dependent current density and effect of SWCNT on these parameters has been shown. It is seen that after incorporating nanotube, the parameters show significant improvement. The results will provide valuable insights for future utilization of thin film devices incorporating herbal dye-based materials.

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单壁碳纳米管（SWCNT）对姜黄染料肖特基器件半导体性能影响的研究：一种空间电荷限制传导方法

在303 ~ 343 K的温度范围内，研究了姜黄染料（TR）基肖特基器件的半导体电学性能以及单壁碳纳米管（SWCNT）对其的影响。利用自旋镀膜技术制备了ITO/TR/Al和ITO/TR + swcnts /Al结构，并进行了电流-电压测量。利用SCLC方法估计器件的电导率、势垒高度、串联电阻和整流比等参数。考虑指数型陷阱分布，从温度相关的电流密度估计陷阱浓度、特征温度、陷阱中心密度等重要参数，并显示了swcnts对这些参数的影响。可以看出，加入纳米管后，这些参数有了明显的改善。该研究结果将为未来使用含有草药染料基材料的薄膜器件提供有价值的见解。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.