A Junction Temperature Measurement Method for Power MOSFETs Through Body Diode With Compensation Ideality Factor

IF 5.6 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Instrumentation and Measurement Pub Date : 2025-04-28 DOI:10.1109/TIM.2025.3565118

Xueli Zhu;Yajie Huang;Donglai Zhang;Anshou Li

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引用次数: 0

Abstract

Power metal–oxide–semiconductor field-effect transistors (MOSFETs) have been widely used in various power conditioning circuits due to their advantages. The junction temperature significantly impacts the reliability, performance, and lifetime of these MOSFETs. Therefore, accurate monitoring the junction temperature of power MOSFETs is essential to ensure the safe operation of power circuit systems. In application scenarios such as half-bridge converters, full-bridge converters, and motor drive circuits, MOSFETs operate in a state where the body diodes are in freewheeling mode. The body diode forward voltage is superior to other temperature-sensitive electrical parameters (TSEPs) in linearity, sensitivity, integration, and aging effect. Therefore, the body diode forward voltage is a reliable TSEP for the junction temperature measurement of power MOSFETs. This article proposes a junction temperature measurement method for power MOSFETs through processing body diode forward voltage with compensation ideality factor. This method only needs to collect the body diode forward voltage under two different forward currents, the junction temperature is then obtained from the forward voltage. The method adopts a way that compensates the intercept difference of

$V_{F}$

–T curves at 0 K to eliminate the influence of the body diode ideality factor and improve the precision of junction temperature measurement. The effect of aging on forward voltage is also considered for junction temperature measurement. The effectiveness of the method has been verified by both theoretical simulations and experiments.

查看原文本刊更多论文

一种带补偿理想因数的体二极管功率mosfet结温测量方法

功率金属氧化物半导体场效应晶体管（mosfet）以其优越的性能被广泛应用于各种功率调节电路中。结温显著影响这些mosfet的可靠性、性能和寿命。因此，准确监测功率mosfet的结温对于保证电力电路系统的安全运行至关重要。在半桥变换器、全桥变换器和电机驱动电路等应用场景中，mosfet在主体二极管处于自由转动模式的状态下工作。体二极管正向电压在线性度、灵敏度、集成度和老化效果方面优于其他温度敏感电参数（tsep）。因此，体二极管正向电压是功率mosfet结温测量的可靠TSEP。提出了一种利用补偿理想因数处理体二极管正向电压的功率mosfet结温测量方法。该方法只需要采集体二极管在两种不同正向电流下的正向电压，然后由正向电压得到结温。该方法采用补偿$V_{F}$ -T曲线在0 K处的截距差的方式，消除了本体二极管理想性因素的影响，提高了结温测量的精度。在结温测量中也考虑了老化对正向电压的影响。理论仿真和实验验证了该方法的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Instrumentation and Measurement 工程技术-工程：电子与电气

CiteScore

9.00

自引率

23.20%

发文量

1294

审稿时长

3.9 months

期刊介绍： Papers are sought that address innovative solutions to the development and use of electrical and electronic instruments and equipment to measure, monitor and/or record physical phenomena for the purpose of advancing measurement science, methods, functionality and applications. The scope of these papers may encompass: (1) theory, methodology, and practice of measurement; (2) design, development and evaluation of instrumentation and measurement systems and components used in generating, acquiring, conditioning and processing signals; (3) analysis, representation, display, and preservation of the information obtained from a set of measurements; and (4) scientific and technical support to establishment and maintenance of technical standards in the field of Instrumentation and Measurement.