High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Journal Pub Date : 2025-04-14 DOI:10.1109/JPHOT.2025.3560443

Pawan Mishra;Lydia Jarvis;Chris Hodges;Abigail Enderson;Fwoziah Albeladi;Sara-Jayne Gillgrass;George M. Jandu;Richard Forrest;Craig P. Allford;Huiwen Deng;Mingchu Tang;Huiyun Liu;Samuel Shutts;Peter M. Smowton

引用次数: 0

Abstract

We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm GaAs spacer layer, both of which are essential components of the active region of the InAs QD laser device. The co-doping scheme enables the demonstration of InAs QD laser device with only seven layers of InAs QDs in the active region for high temperature operation, which is compared with a conventional undoped InAs QD laser device. A Fabry-Pérot laser device with as-cleaved facets and a co-doped InAs QD active region enables ultra-high temperature pulsed-biased O-band laser operation up to 202 °C, compared to 180 °C for conventional undoped InAs QD laser, and without requiring high-reflective facet coatings.

查看原文本刊更多论文

共掺InAs量子点激光器o波段发射的高温工作

我们通过有源区域工程证明了InAs量子点激光器的高温工作。我们在InAs量子点（QD）层中生长了一个n掺杂区域，在43 nm的GaAs间隔层中加入了一个10 nm的p-GaAs调制掺杂层，这两者都是InAs QD激光器件有源区域的重要组成部分。与传统未掺杂的InAs QD激光器相比，该共掺杂方案实现了在有源区只有7层InAs QD的高温工作的InAs QD激光器。一种具有as-cleaved facet和共掺杂InAs QD有源区的fabry - p激光装置可以实现高达202°C的超高温脉冲偏压o波段激光工作，而传统的未掺杂InAs QD激光器的工作温度为180°C，并且不需要高反射facet涂层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Photonics Journal ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

4.50

自引率

8.30%

发文量

489

审稿时长

1.4 months

期刊介绍： Breakthroughs in the generation of light and in its control and utilization have given rise to the field of Photonics, a rapidly expanding area of science and technology with major technological and economic impact. Photonics integrates quantum electronics and optics to accelerate progress in the generation of novel photon sources and in their utilization in emerging applications at the micro and nano scales spanning from the far-infrared/THz to the x-ray region of the electromagnetic spectrum. IEEE Photonics Journal is an online-only journal dedicated to the rapid disclosure of top-quality peer-reviewed research at the forefront of all areas of photonics. Contributions addressing issues ranging from fundamental understanding to emerging technologies and applications are within the scope of the Journal. The Journal includes topics in: Photon sources from far infrared to X-rays, Photonics materials and engineered photonic structures, Integrated optics and optoelectronic, Ultrafast, attosecond, high field and short wavelength photonics, Biophotonics, including DNA photonics, Nanophotonics, Magnetophotonics, Fundamentals of light propagation and interaction; nonlinear effects, Optical data storage, Fiber optics and optical communications devices, systems, and technologies, Micro Opto Electro Mechanical Systems (MOEMS), Microwave photonics, Optical Sensors.