Room-temperature mid-wave infrared InAs/GaSb type-II superlattice photodetectors enhanced by ZnS anti-reflection coating

IF 3.8 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Optical Materials Pub Date : 2025-05-13 DOI:10.1016/j.optmat.2025.117155

Lingze Yao , Yifan Shan , Ruoyu Xie , Qiuyao Pang , Ye Zhang , Mengqi Yang , Dongwei Jiang , Hongyue Hao , Guowei Wang , Yingqiang Xu , Chengao Yang , Donghai Wu , Haiqiao Ni , Wengang Bi , Zhichuan Niu

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Abstract

Achieving a high signal-to-noise ratio is crucial for room-temperature mid-wave infrared (MWIR) InAs/GaSb type-II superlattice photodetectors. Although photon absorption can be improved by increasing the thickness of the absorber, the contradiction between the low absorption coefficient compared to the bulk material and the carrier diffusion length limits the further improvement of quantum efficiency. Here, we report a zinc sulfide (ZnS) anti-reflection (AR) coating-enhanced room-temperature MWIR pπMn photodetector based on InAs/GaSb type-II superlattice for carbon monoxide detection, where a ZnS AR layer integrated with buried electrodes is proposed that warrants a low-reflectivity surface with minimal additional processing cost, thereby improving the photon absorption without compromising the electrical properties. Near the cutoff wavelength, the optimized ZnS layer is further demonstrated to improve the utilization of low-energy photons. Consequently, integrating with the ZnS layer, the photodetector operating at room temperature exhibits a dark current density of 0.34 A/cm² and a quantum efficiency of 36 % at −50 mV bias, leading to a responsivity of 1.31 A/W and a specific detectivity of 2.8 × 10⁹ cm Hz^1/2/W at 4.6 μm.

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ZnS增透涂层增强的室温中波红外InAs/GaSb型超晶格光电探测器

实现高信噪比是室温中波红外（MWIR） InAs/GaSb ii型超晶格光电探测器的关键。虽然可以通过增加吸收体厚度来改善光子吸收，但相对于块状材料的低吸收系数与载流子扩散长度之间的矛盾限制了量子效率的进一步提高。在这里，我们报道了一种基于InAs/GaSb ii型超晶格的硫化锌（ZnS）增透（AR）涂层增强的室温MWIR ppπ mn光电探测器，用于一氧化碳检测，其中提出了一种与埋置电极集成的ZnS增透层，保证了低反射率表面和最小的额外加工成本，从而提高了光子吸收而不影响电学性能。在截止波长附近，优化后的ZnS层进一步提高了低能光子的利用率。因此，与ZnS层集成后，在室温下工作的光电探测器在−50 mV偏置下的暗电流密度为0.34 a /cm2，量子效率为36%，响应率为1.31 a /W，比探测率为2.8 × 109 cm Hz1/2/W。

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来源期刊

Optical Materials 工程技术-材料科学：综合

CiteScore

6.60

自引率

12.80%

发文量

1265

审稿时长

38 days

期刊介绍： Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials. OPTICAL MATERIALS focuses on: • Optical Properties of Material Systems; • The Materials Aspects of Optical Phenomena; • The Materials Aspects of Devices and Applications. Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.