Two-fold effect of compressive stress on stacking-fault tetrahedron formation in face-centered cubic metals

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Xinyu Liu , Hongxian Xie
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引用次数: 0

Abstract

Molecular dynamics simulations were employed to investigate the compressive stress effect on SFTs in Cu and Ni. The results show that compressive stress exerts a dual effect on SFT formation: on one hand, it facilitates the formation of small-size SFTs in Ni; on the other hand, the compressive stress can also disrupt the stableness of pre-existing SFTs. Furthermore, the dual effect of compressive stress on SFTs is verified in terms of energy. It is revealed that compressive stress can reduce the transformation barrier from vacancy platelets to SFTs, thereby promoting the formation of SFTs. Additionally, the transformation from SFT to Frank dislocation loop induced by compressive stress is further investigated in terms of enthalpy. Finally, the structural evolution of SFTs in Cu and Ni are summarized in the compressive stress SFT size space. The present work provided a deep understanding of the behavior of SFT in stress field.
压应力对面心立方金属堆积-断层四面体形成的双重影响
采用分子动力学模拟研究了压应力对Cu和Ni中SFTs的影响。结果表明,压应力对SFT的形成有双重影响:一方面,压应力有利于Ni中小尺寸SFT的形成;另一方面,压应力也会破坏已存在的SFTs的稳定性。此外,从能量的角度验证了压应力对SFTs的双重影响。结果表明,压应力可以减少空位血小板向SFTs的转变障碍,从而促进SFTs的形成。此外,从焓的角度进一步研究了压应力诱导下由SFT向Frank位错环的转变。最后总结了Cu和Ni中SFT在压应力SFT尺寸空间中的结构演变。本文的工作对应力场中单轴弹性变形的行为有了深入的认识。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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