{"title":"The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium","authors":"Mannab Tashmetov , Abror Abdaminov , Khabibulla Djangabaev , Oleg Tolbanov , Normamat Ismatov","doi":"10.1016/j.physb.2025.417377","DOIUrl":null,"url":null,"abstract":"<div><div>The X-ray diffraction study of the GaAs(O):Cr sample showed that the structure is cubic (sp.gr. F-43m). Crystallite sizes and microstrain values were determined for each Miller indices, and the corresponding values were presented. Surface morphology analysis showed that the average width (R<sub><em>a</em></sub>) and height (R<sub>z</sub>) of the surface roughness over an area of 25 μm<sup>2</sup> of the single crystal were 13.7 nm and 94.1 nm, respectively. Microhardness increased from 108.2 HV to 219.2 HV in the load range of 10–100 g. The relationship between mobility, charge carrier concentration, and temperature (100–300 K) for GaAs(O):Cr was determined, and their values were presented. Fourier transform infrared (FTIR) spectroscopy showed local modes at 578, 620, 717, 733, 758, 815, and 946 cm<sup>−1</sup>, which are related to optical phonon vibrations. As a result of studying the Raman spectra of the GaAs(O):Cr sample, peaks were detected at 267, 290, 328.4, and 560.4 cm<sup>−1</sup>.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"713 ","pages":"Article 417377"},"PeriodicalIF":2.8000,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452625004946","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
The X-ray diffraction study of the GaAs(O):Cr sample showed that the structure is cubic (sp.gr. F-43m). Crystallite sizes and microstrain values were determined for each Miller indices, and the corresponding values were presented. Surface morphology analysis showed that the average width (Ra) and height (Rz) of the surface roughness over an area of 25 μm2 of the single crystal were 13.7 nm and 94.1 nm, respectively. Microhardness increased from 108.2 HV to 219.2 HV in the load range of 10–100 g. The relationship between mobility, charge carrier concentration, and temperature (100–300 K) for GaAs(O):Cr was determined, and their values were presented. Fourier transform infrared (FTIR) spectroscopy showed local modes at 578, 620, 717, 733, 758, 815, and 946 cm−1, which are related to optical phonon vibrations. As a result of studying the Raman spectra of the GaAs(O):Cr sample, peaks were detected at 267, 290, 328.4, and 560.4 cm−1.
期刊介绍:
Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work.
Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas:
-Magnetism
-Materials physics
-Nanostructures and nanomaterials
-Optics and optical materials
-Quantum materials
-Semiconductors
-Strongly correlated systems
-Superconductivity
-Surfaces and interfaces