Influence of deposition power of PECVD intrinsic a-Si:H buffer layer on n+ poly-Si/SiOx/c-Si passivating contacts

Abstract

Optimizing the deposition parameters in the fabrication of passivating contacts for crystalline silicon solar cells is critical for improving efficiency. This study explored the influence of varying RF power of Plasma-Enhanced Chemical Vapor Deposition (PECVD) on the quality of hydrogenated intrinsic amorphous silicon (<i> a-Si:H) films. The aim is to manufacture in-situ phosphorous-doped poly-Si/SiO_x/c-Si passivating contacts with <i> a-Si:H as buffer layer between the tunnelling oxide and the n-type poly-Si. The microstructure factor of our intrinsic layers increases from 0.176 to 0.804, that is from higher to lower film density, as the RF power increases from 5 W to 55 W. Analysis using X-ray Photoelectron Spectroscopy and Optical Microscopy indicates that the Si content in SiO_x is correlated with the formation of pinholes. Our detailed analysis showed that varying the RF power when depositing <i> a-Si:H contacting layer is crucial in altering both the Si⁴⁺ content in SiO_x and the pinhole density, due to the interplay between the plasma etching and the buffering effects during of the <i> a-Si:H layer growth. Notably, the sample processed with 25 W exhibited the maximum pinhole density, the lowest Si⁴⁺ content in SiO_x and the deepest phosphorus in-diffusion, potentially yielding superior results in passivation quality and contact resistivity under optimized PECVD conditions.