Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-05-15 DOI:10.1063/5.0252761

Jae Won Na, Kunho Moon, I. Sak Lee, Kyungho Park, Hwa Seon Kim, Si Joon Kim, Hyun Jae Kim

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引用次数: 0

Abstract

This research proposes a selective polytetrafluoroethylene (PTFE) doping strategy to enhance the electrical stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). In contrast to conventional single-layer PTFE-doped IGZO TFTs, which increase electrical stability but face a trade-off with reduced mobility due to the uniform distribution of PTFE throughout the layer, this strategy confines PTFE to the back-channel region of the IGZO layer. By preventing PTFE from entering the effective channel where electron transport occurs, mobility loss is minimized, and stability is significantly improved. Compared to conventional IGZO TFTs, the proposed approach reduces threshold voltage shifts under positive bias stress from 4.94 to 2.69 V and under negative bias illumination stress from 16.63 to 10.84 V, all without mobility degradation. The localized PTFE in the back-channel acts as a passivation layer, reducing interactions with oxygen and moisture in the environment. This selective doping approach provides an effective solution for improving the performance and stability of IGZO-based TFTs in advanced display technologies.

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通过后通道层中PTFE的钝化作用增强了IGZO tft的电稳定性

本研究提出了一种选择性聚四氟乙烯（PTFE）掺杂策略，以提高铟镓锌氧化物（IGZO）薄膜晶体管（TFTs）的电稳定性。传统的单层掺PTFE的IGZO tft增加了电稳定性，但由于PTFE在整个层中的均匀分布而面临迁移率降低的权衡，与此相反，该策略将PTFE限制在IGZO层的后通道区域。通过防止聚四氟乙烯进入电子传递发生的有效通道，迁移率损失最小化，稳定性显着提高。与传统的IGZO TFTs相比，该方法将正偏置应力下的阈值电压位移从4.94减小到2.69 V，将负偏置照明应力下的阈值电压位移从16.63减小到10.84 V，且迁移率没有下降。后通道中的局部聚四氟乙烯充当钝化层，减少与环境中的氧气和水分的相互作用。这种选择性掺杂方法为提高先进显示技术中基于igzo的TFTs的性能和稳定性提供了有效的解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.