Broadband high coupling efficiency edge coupler with low polarization-dependence on the silicon-nitride platform.

IF 3.2 2区 物理与天体物理 Q2 OPTICS
Optics express Pub Date : 2025-04-07 DOI:10.1364/OE.554774
Xiheng Ai, Maxwell Wei Xuan, Yang Zhang, Wei-Lun Hsu, Sylvain Veilleux, Mario Dagenais
{"title":"Broadband high coupling efficiency edge coupler with low polarization-dependence on the silicon-nitride platform.","authors":"Xiheng Ai, Maxwell Wei Xuan, Yang Zhang, Wei-Lun Hsu, Sylvain Veilleux, Mario Dagenais","doi":"10.1364/OE.554774","DOIUrl":null,"url":null,"abstract":"<p><p>In this paper, we present an ultra-broadband double-tip edge coupler with high coupling efficiencies for both TE and TM polarizations on a silicon nitride platform. The coupler is designed for the high NA fiber which provides a smaller mode size. In simulations, both TE and TM coupling efficiencies remain above 90% within the wavelength range 1000-2000 nm. In comparison, the TE and TM coupling efficiencies of the conventional single-tip coupler design can drop below 73% over this range. An ultra-high coupling efficiency above 95% is predicted over a bandwidth of 760 nm for the TE mode with the double-tip design, compared to 450 nm for the single-tip design. Experimentally, the highest measured coupling efficiencies for the double-tip and single-tip couplers are 97.1% and 95.7%, respectively. For the double-tip design, the coupling efficiency remains above 90% within the measurement range (1450-1640 nm), as the polarization state changes with the wavelength. These measurements confirm the polarization insensitivity of the double-tip design. In addition, we measure the performance of the double-tip design with a laser source operating at shorter wavelengths. The measured 94% coupling efficiency at 1280 nm indicates the broad bandwidth of the coupler. This work is anticipated to provide a promising foundation for the development of compact efficient photonic devices.</p>","PeriodicalId":19691,"journal":{"name":"Optics express","volume":"33 7","pages":"16253-16262"},"PeriodicalIF":3.2000,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics express","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1364/OE.554774","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
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Abstract

In this paper, we present an ultra-broadband double-tip edge coupler with high coupling efficiencies for both TE and TM polarizations on a silicon nitride platform. The coupler is designed for the high NA fiber which provides a smaller mode size. In simulations, both TE and TM coupling efficiencies remain above 90% within the wavelength range 1000-2000 nm. In comparison, the TE and TM coupling efficiencies of the conventional single-tip coupler design can drop below 73% over this range. An ultra-high coupling efficiency above 95% is predicted over a bandwidth of 760 nm for the TE mode with the double-tip design, compared to 450 nm for the single-tip design. Experimentally, the highest measured coupling efficiencies for the double-tip and single-tip couplers are 97.1% and 95.7%, respectively. For the double-tip design, the coupling efficiency remains above 90% within the measurement range (1450-1640 nm), as the polarization state changes with the wavelength. These measurements confirm the polarization insensitivity of the double-tip design. In addition, we measure the performance of the double-tip design with a laser source operating at shorter wavelengths. The measured 94% coupling efficiency at 1280 nm indicates the broad bandwidth of the coupler. This work is anticipated to provide a promising foundation for the development of compact efficient photonic devices.

基于氮化硅平台的宽带高耦合效率低极化依赖边缘耦合器。
在本文中,我们提出了一种在氮化硅平台上具有高耦合效率的超宽带双尖端边缘耦合器,用于TE和TM极化。该耦合器专为高NA光纤设计,可提供更小的模式尺寸。在模拟中,在1000-2000 nm波长范围内,TE和TM的耦合效率都保持在90%以上。相比之下,传统的单尖端耦合器设计的TE和TM耦合效率在此范围内可降至73%以下。与单尖端设计的450纳米带宽相比,双尖端设计的TE模式在760纳米带宽上的耦合效率预计将达到95%以上。实验结果表明,双端和单端耦合器的最高耦合效率分别为97.1%和95.7%。双尖端设计在1450 ~ 1640 nm测量范围内,耦合效率保持在90%以上,极化状态随波长变化。这些测量结果证实了双尖端设计的偏振不灵敏度。此外,我们还测量了双尖端设计在较短波长的激光源下的性能。在1280 nm处测量到94%的耦合效率,表明该耦合器具有较宽的带宽。这项工作有望为开发紧凑高效的光子器件提供有希望的基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Optics express
Optics express 物理-光学
CiteScore
6.60
自引率
15.80%
发文量
5182
审稿时长
2.1 months
期刊介绍: Optics Express is the all-electronic, open access journal for optics providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and photonics.
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