Enhanced High-Temperature Energy Storage in a Polyimide Alloy via Oriented High-Bandgap P(TFE-PPVE)

IF 12.1 2区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Small Pub Date : 2025-05-15 DOI:10.1002/smll.202501691
Man Liu, Feihua Liu, Hongmei Qin, Chuanxi Xiong, Hengxue Xiang, Liping Zhu, Meifang Zhu
{"title":"Enhanced High-Temperature Energy Storage in a Polyimide Alloy via Oriented High-Bandgap P(TFE-PPVE)","authors":"Man Liu,&nbsp;Feihua Liu,&nbsp;Hongmei Qin,&nbsp;Chuanxi Xiong,&nbsp;Hengxue Xiang,&nbsp;Liping Zhu,&nbsp;Meifang Zhu","doi":"10.1002/smll.202501691","DOIUrl":null,"url":null,"abstract":"<p>Polymer dielectric films are widely used in advanced electronics, hybrid vehicles, etc., however, they encounter critical challenges, including significant thermal degradation and heightened leakage currents, which severely constrain their energy density and efficiency under high-temperature conditions. Herein, a novel strategy is proposed for constructing a polyimide (PI) alloy by incorporating high-bandgap copolymer of perfluoropropyl perfluorovinyl ether and tetrafluoroethylene (P(TFE-PPVE)) and fluorinated polyimide (FPI) as a compatibilizer. The highly oriented structural PI/FPI/P(TFE-PPVE) alloy is fabricated via knife casting, which utilized high shear forces to align the P(TFE-PPVE) blocks within the polyamide acid. Simulation results indicate that the high-bandgap P(TFE-PPVE) phase (9.72 eV) with an oriented structure in the PI matrix can effectively suppress electrical tree growth. Furthermore, deep carrier trap at the PI/P(TFE-PPVE) interface (2.98 eV) further reduces leakage current and enhances breakdown strength while minimizing conduction loss. As a result, the PI/FPI/0.25P(TFE-PPVE) alloy demonstrates remarkable dielectric stability under diverse conditions, achieving a discharge energy density of 3.75 J cm<sup>−3</sup> with 90% efficiency at 150 °C and 550 MV m<sup>−1</sup>. This straightforward blending strategy provides an effective pathway to modulate the condensed structure of all organic polymers, offering promising potential for high-performance polymer dielectrics.</p>","PeriodicalId":228,"journal":{"name":"Small","volume":"21 27","pages":""},"PeriodicalIF":12.1000,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Small","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/smll.202501691","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Polymer dielectric films are widely used in advanced electronics, hybrid vehicles, etc., however, they encounter critical challenges, including significant thermal degradation and heightened leakage currents, which severely constrain their energy density and efficiency under high-temperature conditions. Herein, a novel strategy is proposed for constructing a polyimide (PI) alloy by incorporating high-bandgap copolymer of perfluoropropyl perfluorovinyl ether and tetrafluoroethylene (P(TFE-PPVE)) and fluorinated polyimide (FPI) as a compatibilizer. The highly oriented structural PI/FPI/P(TFE-PPVE) alloy is fabricated via knife casting, which utilized high shear forces to align the P(TFE-PPVE) blocks within the polyamide acid. Simulation results indicate that the high-bandgap P(TFE-PPVE) phase (9.72 eV) with an oriented structure in the PI matrix can effectively suppress electrical tree growth. Furthermore, deep carrier trap at the PI/P(TFE-PPVE) interface (2.98 eV) further reduces leakage current and enhances breakdown strength while minimizing conduction loss. As a result, the PI/FPI/0.25P(TFE-PPVE) alloy demonstrates remarkable dielectric stability under diverse conditions, achieving a discharge energy density of 3.75 J cm−3 with 90% efficiency at 150 °C and 550 MV m−1. This straightforward blending strategy provides an effective pathway to modulate the condensed structure of all organic polymers, offering promising potential for high-performance polymer dielectrics.

Abstract Image

利用定向高带隙P(TFE-PPVE)增强聚酰亚胺合金的高温储能性能。
聚合物介电膜广泛应用于先进电子产品、混合动力汽车等领域,但其面临着严重的热降解和泄漏电流增大等严峻挑战,这严重制约了其在高温条件下的能量密度和效率。本文提出了采用全氟丙基全氟乙烯醚和四氟乙烯高带隙共聚物(P(TFE-PPVE))和氟化聚酰亚胺(FPI)作为相容剂构建聚酰亚胺(PI)合金的新策略。高取向结构PI/FPI/P(TFE-PPVE)合金是通过刀铸制造的,它利用高剪切力在聚酰胺酸中对齐P(TFE-PPVE)块。仿真结果表明,PI矩阵中具有取向结构的高带隙P(TFE-PPVE)相(9.72 eV)可以有效抑制电树生长。此外,在PI/P(TFE-PPVE)界面(2.98 eV)处的深载流子陷阱进一步降低了泄漏电流,提高了击穿强度,同时最小化了导通损耗。结果表明,PI/FPI/0.25P(TFE-PPVE)合金在不同条件下均表现出良好的介电稳定性,在150°C和550 MV m-1条件下,放电能量密度为3.75 J cm-3,效率为90%。这种简单的共混策略为调节所有有机聚合物的凝聚结构提供了有效途径,为高性能聚合物电介质提供了广阔的发展前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Small
Small 工程技术-材料科学:综合
CiteScore
17.70
自引率
3.80%
发文量
1830
审稿时长
2.1 months
期刊介绍: Small serves as an exceptional platform for both experimental and theoretical studies in fundamental and applied interdisciplinary research at the nano- and microscale. The journal offers a compelling mix of peer-reviewed Research Articles, Reviews, Perspectives, and Comments. With a remarkable 2022 Journal Impact Factor of 13.3 (Journal Citation Reports from Clarivate Analytics, 2023), Small remains among the top multidisciplinary journals, covering a wide range of topics at the interface of materials science, chemistry, physics, engineering, medicine, and biology. Small's readership includes biochemists, biologists, biomedical scientists, chemists, engineers, information technologists, materials scientists, physicists, and theoreticians alike.
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