Sudhanshu Shukla, Irene Dei Tos, Angelica Simbula, Julian Guerrero, Thanh Dong, Sownder Subramaniam, Beatriz de la Fuente, Vishal K Jose, Tom Aernouts, Negar Naghavi, Bart Vermang, Yinghuan Kuang
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引用次数: 0
Abstract
Conjugation of low-cost and high-performance semiconductors is essential in solar-driven photoelectrochemical (PEC) energy conversion. Sb2S3 is a wide-bandgap (≈1.7 eV) semiconductor with the potential to deliver a maximum photocurrent density of 24.5 mA cm-2, making it highly attractive for PEC water splitting applications. However, bulk Sb2S3 exhibits intrinsic recombination issues and low electron-hole separation, posing a limit to photocurrent generation. This study clarifies the carrier dynamics by ultrafast spectroscopy measurements and proposes the design of a heterojunction between Sb2S3 and SnO2, with suitable band-edge energy offset. The SnO2/Sb2S3 heterojunction enhances the charge separation efficiency, resulting in improvement of the photocurrent. The SnO2/Sb2S3 photoanode, fabricated entirely by vapor deposition processes, demonstrated photoelectrochemical water oxidation with a photocurrent density up to ca. 3 mA cm-2 at 1.38 V vs RHE.
在太阳能驱动的光电化学(PEC)能量转换中,低成本和高性能半导体的共轭是必不可少的。Sb2S3是一种宽带隙(≈1.7 eV)半导体,具有提供24.5 mA cm-2的最大光电流密度的潜力,使其在PEC水分解应用中具有很高的吸引力。然而,块体Sb2S3存在固有的复合问题和低电子空穴分离,限制了光电流的产生。本研究通过超快光谱测量澄清了载流子动力学,并提出了Sb2S3与SnO2之间具有合适带边能量偏移的异质结设计。SnO2/Sb2S3异质结提高了电荷分离效率,从而改善了光电流。完全通过气相沉积工艺制备的SnO2/Sb2S3光阳极在1.38 V vs RHE下具有高达约3 mA cm-2的光电流密度。
期刊介绍:
ChemSusChem
Impact Factor (2016): 7.226
Scope:
Interdisciplinary journal
Focuses on research at the interface of chemistry and sustainability
Features the best research on sustainability and energy
Areas Covered:
Chemistry
Materials Science
Chemical Engineering
Biotechnology